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K75T60

K75T60
Categories IGBT Transistors
Gate-Emitter Leakage Current :: 100 nA
Product Category :: IGBT Transistors
Mounting Style :: Through Hole
Continuous Collector Current at 25 C :: 80 A
Pd - Power Dissipation :: 428 W
Collector- Emitter Voltage VCEO Max :: 600 V
Package / Case :: TO-247-3
Maximum Operating Temperature :: + 175 C
Maximum Gate Emitter Voltage :: 5.7 V
Packaging :: Tube
Configuration :: Single
Collector-Emitter Saturation Voltage :: 1.9 V
Manufacturer :: Infineon Technologies
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K75T60

The K75T60,from Infineon Technologies,is IGBT Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
Product Tags:

K6X8008T2B-TF55

  

BT131-600

  

BT137-600

  
Buy K75T60 at wholesale prices
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