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Categories IGBT Transistors
Gate-Emitter Leakage Current :: 200 nA
Product Category :: IGBT Transistors
Mounting Style :: Through Hole
Continuous Collector Current at 25 C :: 75 A
Pd - Power Dissipation :: 480 W
Collector- Emitter Voltage VCEO Max :: 1200 V
Package / Case :: TO-247-3
Maximum Operating Temperature :: + 175 C
Maximum Gate Emitter Voltage :: 20 V
Packaging :: Tube
Configuration :: Single
Collector-Emitter Saturation Voltage :: 2.3 V
Manufacturer :: Infineon Technologies
Description: IGBT Transistors LOW LOSS DuoPack 1200V 40A
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IKW40N120T2

The IKW40N120T2,from Infineon Technologies,is IGBT Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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M29W160ET90N1

  

LE82GM965

  
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