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IGW15T120

Categories IGBT Transistors
Gate-Emitter Leakage Current :: 100 nA
Product Category :: IGBT Transistors
Mounting Style :: Through Hole
Continuous Collector Current at 25 C :: 30 A
Pd - Power Dissipation :: 110 W
Collector- Emitter Voltage VCEO Max :: 1200 V
Package / Case :: TO-247-3
Maximum Operating Temperature :: + 150 C
Maximum Gate Emitter Voltage :: +/- 20 V
Packaging :: Tube
Configuration :: Single
Collector-Emitter Saturation Voltage :: 2.2 V
Manufacturer :: Infineon Technologies
Description: IGBT Transistors LOW LOSS IGBT TECH 1200V 15A
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IGW15T120

The IGW15T120,from Infineon Technologies,is IGBT Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
Product Tags:

M29W160ET70N6E

  

M41T56M6

  

M29W800DT70N6F

  
Buy IGW15T120 at wholesale prices
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