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APT25GP120BDQ1G

Categories IGBT Transistors
Gate-Emitter Leakage Current :: 100 nA
Product Category :: IGBT Transistors
Mounting Style :: Through Hole
Continuous Collector Current at 25 C :: 69 A
Pd - Power Dissipation :: 417 W
Collector- Emitter Voltage VCEO Max :: 1.2 kV
Package / Case :: TO-247-3
Maximum Operating Temperature :: + 150 C
Maximum Gate Emitter Voltage :: 30 V
Configuration :: Single
Collector-Emitter Saturation Voltage :: 3.3 V
Manufacturer :: Microsemi
Description: IGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS 7 - Combi
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APT25GP120BDQ1G

The APT25GP120BDQ1G,from Microsemi,is IGBT Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
Product Tags:

OPA2348AIDCNR

  

OPA2380AIDGKTG4

  

OPA2334AIDGST

  
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