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FGH50N3

Categories IGBT Transistors
Gate-Emitter Leakage Current :: +/- 250 nA
Product Category :: IGBT Transistors
Mounting Style :: Through Hole
Continuous Collector Current at 25 C :: 75 A
Pd - Power Dissipation :: 463 W
Collector- Emitter Voltage VCEO Max :: 300 V
Package / Case :: TO-247-3
Maximum Operating Temperature :: + 150 C
Maximum Gate Emitter Voltage :: +/- 20 V
Packaging :: Tube
Configuration :: Single
Collector-Emitter Saturation Voltage :: 1.3 V
Manufacturer :: Fairchild Semiconductor
Description: IGBT Transistors 300V PT N-Channel
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FGH50N3

The FGH50N3,from Fairchild Semiconductor,is IGBT Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
Product Tags:

HEF4011BT

  

HEF40193BT

  

105 f2.8

  
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