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3 Inch Dia 76.2mm Sapphire Substrate Optical Crystal Windows

Categories Piezoelectric Wafer
Brand Name: BonTek
Model Number: Sapphire (Al2O3)
Certification: ISO:9001
Place of Origin: China
MOQ: 5 Pieces
Price: Negotiable
Payment Terms: T/T
Supply Ability: 10000 pieces/Month
Delivery Time: 1-4 weeks
Packaging Details: Cassette, Jar, Film package
Material: Al2O3 Wafer
Purity: 99.999%
Melting Point: 2040 °C
Thermal Conductivity: 27.21 W/(m x K) at 300 K
Diameter: 3 inch, 76.2mm
Hardness: 9.0 Mohs
Specific Heat Capacity: 419 J/(kg x K)
Dielectric Constant: 11.5 (parallel C-axis) 9.4 (perpendicular C-axis) at 1MHz
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3 Inch Dia 76.2mm Sapphire Substrate Optical Crystal Windows

3 Inch Dia 76.2mm Sapphire Substrate Optical Crystal Windows


Single crystal sapphire Al2O3 possesses a unique combination of excellent optical, physical and chemical properties. The hardest of the oxide crystals, sapphire Al2O3 retains its high strength at high temperatures, has good thermal properties and excellent transparency. Sapphire Al2O3 optics is chemically resistant to many acids and alkalis at temperatures up to 1000 degrees C as well as to HF below 300 degrees C. These properties encourage its wide use of Sapphire Al2O3 optics in hostile environments where optical transmission in the range from the visible to the near infrared is required.



Item

3-inch C-plane(0001) 650μm Sapphire Wafers

Crystal Materials

99,999%, High Purity, Monocrystalline Al2O3

Grade

Prime, Epi-Ready

Surface Orientation

C-plane(0001)

C-plane off-angle toward M-axis 0.2 +/- 0.1°

Diameter

76.2 mm +/- 0.1 mm

Thickness

650 μm +/- 25 μm

Primary Flat Orientation

A-plane(11-20) +/- 0.2°

Primary Flat Length

22.0 mm +/- 1.0 mm

Single Side Polished

Front Surface

Epi-polished, Ra < 0.2 nm (by AFM)

(SSP)

Back Surface

Fine ground, Ra = 0.8 μm to 1.2 μm

Double Side Polished

Front Surface

Epi-polished, Ra < 0.2 nm (by AFM)

(DSP)

Back Surface

Epi-polished, Ra < 0.2 nm (by AFM)

TTV

< 20 μm

BOW

< 20 μm

WARP

< 20 μm

Cleaning / Packaging

Class 100 cleanroom cleaning and vacuum packaging, single piece packaging.


PHYSICAL PROPERTIES of SAPPHIRE Al2O3
Density3.97 g/cm3
Melting Point2040 degrees C
Thermal Conductivity27.21 W/(m x K) at 300 K
Thermal Expansion5.6 x 10 -6 /K (parallel C-axis) & 5.0 (perpendicular C-axis) x 10 -6 /K
HardnessKnoop 2000 kg/mm 2 with 2000g indenter
Specific Heat Capacity419 J/(kg x K)
Dielectric Constant11.5 (parallel C-axis) 9.4 (perpendicular C-axis) at 1MHz
Young's Modulus (E)335 GPa
Shear Modulus (G)148.1 GPa
Bulk Modulus (K)240 GPa
Elastic CoefficientsC11=496 C12=164 C13=115
C33=498 C44=148
Apparent Elastic Limit275 MPa (40,000 psi)
Poisson Ratio0.25


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