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2 Inch 4 Inch 6 Inch Sapphire Single Crystal Wafer With Various Orientations

Categories Piezoelectric Wafer
Brand Name: BonTek
Model Number: Sapphire (Al2O3)
Certification: ISO:9001
Place of Origin: China
MOQ: 5 Pieces
Price: Negotiable
Payment Terms: T/T
Supply Ability: 10000 pieces/Month
Delivery Time: 1-4 weeks
Packaging Details: Cassette, Jar, Film package
Material: Sapphire Wafer
Type: Single Crystal
Color: White / Red / Blue
Growth Method: Horizontally Directed Crystallization (HDC)
Melting Point: 2040 degrees C
Young's Modulus (E): 335 GPa
Shear Modulus (G): 148.1 GPa
Bulk Modulus (K): 240 GPa
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2 Inch 4 Inch 6 Inch Sapphire Single Crystal Wafer With Various Orientations

2 Inch 4 Inch 6 Inch Sapphire Single Crystal Wafer With Various Orientations


Sizes: 2 ", 4 ", 6 "and cut small pieces;

C direction, M direction, R direction; Single side polish, double side polish;

Thickness: 100um, 280um, 300um, 350um, 430um, 500um, 650um, 1mm;

Sapphire is a single crystal of alumina and is the second hardest material in nature, after diamond. Sapphire has good light transmittance, high strength, collision resistance, wear resistance, corrosion resistance and resistance to high temperature and high pressure, biocompatibility, can be made into various shapes of objects. It is an ideal substrate material for making semiconductor optoelectronic devices.

Application: Sapphire single crystal is an excellent multifunctional material. Can be widely used in industry, national defense and scientific research and other fields (such as high temperature resistant infrared window). It is also a widely used single crystal substrate material. Is the current blue, purple, white light emitting diode (LED) and blue laser (LD) industry of the first choice substrate (need to epitaxy gallium nitride film layer on sapphire substrate), is also an important superconducting thin film substrate. In addition to making Y- series, La- series and other high temperature superconducting thin films, it can also be used to grow new practical MgB2 (magnesium diboride) superconducting thin films.



OPTICAL PROPERTIES

Transmission

0.17 to 5.5 um

Refractive Index

1.75449 (o) 1.74663 (e) at 1.06 um

Reflection Loss

at 1.06 microns (2 surfaces) for o-ray - 11.7%; for e-ray - 14.2%

Absorption Index

0.3 x 10-3 cm-1 at 2.4 um

dN/dT

13.7 x 10-6 at 5.4 um

dn/dm = 0

1.5 um


Orientation

R-plane, C-plane, A-plane, M-plane or a specified orientation

Orientation Tolerance

± 0.3°

Diameter

2 inches, 3 inches, 4 inches, 6 inches, 8 inches or others

Diameter Tolerance

0.1mm for 2 inches, 0.2mm for 3 inches, 0.3mm for 4 inches, 0.5mm for 6 inches

Thickness

0.25mm, 0.33mm, 0.43mm, 0.65mm, 1mm or others;

Thickness Tolerance

25μm

Primary Flat Length

16.0±1.0mm for 2 inches, 22.0±1.0mm for 3 inches, 30.0±1.5mm for 4 inches, 47.5/50.0±2.0mm for 6 inches

Primary Flat Orientation

A-plane (1 1-2 0 ) ± 0.2°; C-plane (0 0-0 1 ) ± 0.2°, Projected C-Axis 45 +/- 2°

TTV

≤10µm for 2 inches, ≤15µm for 3 inches, ≤20µm for 4 inches, ≤25µm for 6 inches

BOW

≤10µm for 2 inches, ≤15µm for 3 inches, ≤20µm for 4 inches, ≤25µm for 6 inches

Front Surface

Epi-Polished (Ra< 0.3nm for C-plane, 0.5nm for other orientations)

Back Surface

Fine ground (Ra=0.6μm~1.4μm) or Epi-polished

Packaging

Packaged in a class 100 clean room environment


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