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| Categories | MOSFET Power Electronics |
|---|---|
| Brand Name: | onsemi |
| Model Number: | FDMS86181 |
| Place of Origin: | original |
| MOQ: | 1 |
| Price: | Negotiable |
| Payment Terms: | L/C, D/A, D/P, T/T, Western Union, MoneyGram |
| Supply Ability: | 999999 |
| Delivery Time: | 1-3 days |
| Packaging Details: | standard |
| Drain to Source Voltage (Vdss): | 100 V |
| Current - Continuous Drain (Id) @ 25°C: | 44A (Ta), 124A (Tc) |
| Drive VoDrive Voltage (Max Rds On, Min Rds On): | 6V, 10V |
| Rds On (Max) @ Id, Vgs: | 4.2mOhm @ 44A, 10V |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Vgs (Max): | ±20V |
FDMS86181 MOSFET Power Electronics Single N-Channel Shielded Gate POWERTRENCH 100 V 124 A 4.2 m
Drain to Source Voltage (Vdss) | ||
Current - Continuous Drain (Id) @ 25°C | ||
Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V | |
Rds On (Max) @ Id, Vgs | 4.2mOhm @ 44A, 10V | |
Vgs(th) (Max) @ Id | 4V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 59 nC @ 10 V | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 4125 pF @ 50 V | |
FET Feature | - | |
Power Dissipation (Max) | 2.5W (Ta), 125W (Tc) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | ||
Supplier Device Package | 8-PQFN (5x6) | |
Package / Case |
General Description
This N−Channel MV MOSFET is produced using onsemi’s
advanced POWERTRENCH® process that incorporates Shielded
Gate technology. This process has been optimized to minimise
on−state resistance and yet maintain superior switching performance
with best in class soft body diode.
Features
• Shielded Gate MOSFET Technology
• Max rDS(on) = 4.2 m at VGS = 10 V, ID = 44 A
• Max rDS(on) = 12 m at VGS = 6 V, ID = 22 A
• ADD
• 50% lower Qrr than other MOSFET suppliers
• Lowers switching noise/EMI
• MSL1 robust package design
• 100% UIL tested
• RoHS Compliant
Applications
• Primary DC−DC MOSFET
• Synchronous Rectifier in DC−DC and AC−DC
• Motor Drive
• Solar
res

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