NCP3133AMNTXG onsemi

Here is the English description of the NCP3133AMNTXG chip:

• Breakdown Voltage: 30V
• Continuous Drain Current: 3.3A
• On-Resistance: 55 mΩ (typ)
• Fast Switching Speeds
• Power SO-8 Package
• Integrated Dual N-Channel MOSFET
• Adjustable Current Limit

The NCP3133AMNTXG is a dual N-channel power MOSFET from ON Semiconductor.

Key Features:

• Each FET can switch up to 3.3A of current
• Low on-resistance of 55 mΩ for high efficiency
• Fast switching speeds
• Power SO-8 package provides good thermal dissipation
• Integrated dual FET reduces component count
• Adjustable current limit protection

Common Applications:

• DC-DC step-down converters up to 3.3A load current
• Motor drivers requiring current limit protection
• Circuit designs where board space is limited

Benefits include a compact 3.3A dual switch with current limit in one package. It simplifies design while adding protection.

Well suited for applications that require dual switching paths, current limiting and minimal space.

In summary, the NCP3133AMNTXG combines dual 3.3A power MOSFETs, current limit and a small footprint for efficient, protected power switching.

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