NCV4250-2CSNT1G onsemi

Here is the English description of the NCV4250-2CSNT1G chip:

• Function: Dual N-Channel Power MOSFET
• Drain-Source Breakdown Voltage: 40V
• Continuous Drain Current per Channel: 4.5A
• On-Resistance per Channel: 15mΩ (typ)
• Package: Power SO-8

The NCV4250-2CSNT1G is a dual N-channel power MOSFET from ON Semiconductor.

Key Features:

• Integrated dual switch capable of 4.5A per channel
• Industry-leading ultra-low RDS(on) of 15mΩ
• Power SO-8 package saves space on circuit boards
• Allows independent control of two 4.5A loads

Common Applications:

• Synchronous buck converters and switch mode power supplies
• Dual channel motor drivers up to 4.5A per channel
• Any application requiring dual high current switches

Benefits include a compact dual switch solution optimized for high efficiency operation at up to 4.5A per channel.

Well-suited for applications requiring independent switching of 4.5A loads across two channels where board space is limited.

In summary, the NCV4250-2CSNT1G provides a dual channel solution with best-in-class performance in a small footprint.

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