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MT3S111TU,LF

Categories Bipolar RF Transistors
Category: Discrete Semiconductor Products Transistors Bipolar (BJT) Bipolar RF Transistors
Current - Collector (Ic) (Max): 100mA
Product Status: Active
Transistor Type: NPN
Mounting Type: Surface Mount
Frequency - Transition: 10GHz
Package: Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Series: -
Voltage - Collector Emitter Breakdown (Max): 6V
Supplier Device Package: UFM
Mfr: Toshiba Semiconductor and Storage
Noise Figure (dB Typ @ f): 0.6dB ~ 0.85dB @ 500MHz ~ 1GHz
Power - Max: 800mW
Gain: 12.5dB
Package / Case: 3-SMD, Flat Lead
Operating Temperature: 150°C (TJ)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 30mA, 5V
Base Product Number: MT3S111
Description: RF SIGE NPN BIPOLAR TRANSISTOR N
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MT3S111TU,LF

RF Transistor NPN 6V 100mA 10GHz 800mW Surface Mount UFM
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