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IRG7PH50K10DPBF

Categories IGBT Transistors
Gate-Emitter Leakage Current :: 100 nA
Product Category :: IGBT Transistors
Mounting Style :: Through Hole
Continuous Collector Current at 25 C :: 90 A
Pd - Power Dissipation :: 400 W
Collector- Emitter Voltage VCEO Max :: 1200 V
Package / Case :: TO-247AC-3
Maximum Operating Temperature :: + 150 C
Maximum Gate Emitter Voltage :: +/- 30 V
Packaging :: Tube
Configuration :: Single
Collector-Emitter Saturation Voltage :: 2.4 V
Manufacturer :: IR / Infineon
Description: IGBT Transistors 1200V UltraFast Discrete IGBT
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IRG7PH50K10DPBF

The IRG7PH50K10DPBF,from IR / Infineon,is IGBT Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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