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FS800R07A2E3

Categories IC Transistor
Gate-Emitter Leakage Current :: 400 nA
Product Category :: IGBT Modules
Continuous Collector Current at 25 C :: 800 A
Pd - Power Dissipation :: 1500 W
Collector- Emitter Voltage VCEO Max :: 650 V
Package / Case :: HybirdPack2
Maximum Operating Temperature :: + 150 C
Configuration :: Single
Collector-Emitter Saturation Voltage :: 1.4 V
Product :: IGBT Silicon Modules
Manufacturer :: Infineon Technologies
Description: IGBT Modules HYBRID PACK 2
Stock: In Stock
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FS800R07A2E3

The FS800R07A2E3,from Infineon Technologies,is IGBT Modules.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
Product Tags:

FV80503233

  

F65535A

  

K9F5608U0D

  
Buy FS800R07A2E3 at wholesale prices
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