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FS3L50R07W2H3F_B11

Categories IC Transistor
Gate-Emitter Leakage Current :: 100 nA
Product Category :: IGBT Modules
Continuous Collector Current at 25 C :: 75 A
Pd - Power Dissipation :: 215 W
Collector- Emitter Voltage VCEO Max :: 650 V
Package / Case :: EasyPack2B
Maximum Operating Temperature :: + 150 C
Configuration :: 3-Phase
Collector-Emitter Saturation Voltage :: 1.45 V
Product :: IGBT Silicon Modules
Manufacturer :: Infineon Technologies
Description: IGBT Modules
Stock: In Stock
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FS3L50R07W2H3F_B11

The FS3L50R07W2H3F_B11,from Infineon Technologies,is IGBT Modules.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
Product Tags:

FW82371EB(SL37M)

  

FW82371EB-SL37M

  

M29W160EB70N6F

  
Buy FS3L50R07W2H3F_B11 at wholesale prices
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