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FD150R12RT4

Categories IC Transistor
Gate-Emitter Leakage Current :: 100 nA
Product Category :: IGBT Modules
Continuous Collector Current at 25 C :: 150 A
Collector- Emitter Voltage VCEO Max :: 1200 V
Pd - Power Dissipation :: 790 W
Maximum Operating Temperature :: + 150 C
Collector-Emitter Saturation Voltage :: 2.15 V
Manufacturer :: Infineon Technologies
Description: IGBT Modules IGBT 1200V 150A
Stock: In Stock
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FD150R12RT4

The FD150R12RT4,from Infineon Technologies,is IGBT Modules.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
Product Tags:

DF2308

  

FW82810E-SL3MD

  

FW82815EP-SL5NR

  
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