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FS50R12W2T4

Categories IC Transistor
Gate-Emitter Leakage Current :: 100 nA
Product Category :: IGBT Modules
Continuous Collector Current at 25 C :: 83 A
Pd - Power Dissipation :: 335 W
Collector- Emitter Voltage VCEO Max :: 1200 V
Package / Case :: Module
Maximum Operating Temperature :: + 150 C
Configuration :: IGBT-Inverter
Collector-Emitter Saturation Voltage :: 1.85 V
Product :: IGBT Silicon Modules
Manufacturer :: Infineon Technologies
Stock: In Stock
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FS50R12W2T4

The FS50R12W2T4,from Infineon Technologies,is IGBT Modules.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
Product Tags:

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