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BSM50GP60G

Categories IC Transistor
Gate-Emitter Leakage Current :: 300 nA
Product Category :: IGBT Modules
Continuous Collector Current at 25 C :: 70 A
Pd - Power Dissipation :: 250 W
Collector- Emitter Voltage VCEO Max :: 600 V
Package / Case :: EconoPIM3
Maximum Operating Temperature :: + 125 C
Configuration :: Hex
Collector-Emitter Saturation Voltage :: 2.2 V
Product :: IGBT Silicon Modules
Manufacturer :: Infineon Technologies
Description: IGBT Modules 600V 50A PIM
Stock: In Stock
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BSM50GP60G

The BSM50GP60G,from Infineon Technologies,is IGBT Modules.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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