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BSM10GP120

Categories IC Transistor
Gate-Emitter Leakage Current :: 300 nA
Product Category :: IGBT Modules
Continuous Collector Current at 25 C :: 20 A
Pd - Power Dissipation :: 100 W
Collector- Emitter Voltage VCEO Max :: 1200 V
Package / Case :: EconoPIM2
Maximum Operating Temperature :: + 125 C
Packaging :: Tray
Configuration :: Hex
Collector-Emitter Saturation Voltage :: 2.4 V
Product :: IGBT Silicon Modules
Manufacturer :: Infineon Technologies
Description: IGBT Modules 1200V 10A PIM
Stock: In Stock
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BSM10GP120

The BSM10GP120,from Infineon Technologies,is IGBT Modules.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
Product Tags:

BSP110

  

BSP130

  

BSP108

  
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