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| Categories | MCU IC |
|---|---|
| Description: | The NJVMJD350T4G belongs to a Bipolar Junction Transistor (BJT) chip, specifically a PNP-type Bipolar Junction Transisto |
| Stock: | 5200-20000 |
| MOQ: | 1000pcs |
| Price: | Negotiated |
| Payment Terms: | T/T |
| Shipping Method: | LCL, AIR, FCL, Express |
| Maximum Collector-Emitter Voltage (VCEO): | 300V |
| Maximum Collector-Base Voltage (VCBO): | 300V |
| Maximum Emitter-Base Voltage (VEBO): | 3V |
| Maximum DC Collector Current (Ic): | 500mA (i.e., 0.5A) |
| Company Info. |
| SHENZHEN ECER NETWORK TECHNOLOGY CO.,LTD |
| Verified Supplier |
| View Contact Details |
| Product List |
The NJVMJD350T4G belongs to a Bipolar Junction Transistor (BJT) chip, specifically a PNP-type Bipolar Junction Transistor. Manufactured by ON Semiconductor, this chip features a set of specific specifications and performance characteristics.
Here are the key specifications of the NJVMJD350T4G chip translated into English:
In addition, the NJVMJD350T4G chip has the following characteristics:
In summary, the NJVMJD350T4G is a stable and versatile PNP-type
Bipolar Junction Transistor chip that is widely used in various
electronic devices requiring transistor amplification and switching
capabilities.
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