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High Precision Packaging Non-Cooled Type S16765-01MS Infrared Photoelectric Sensor with Low Dark Current and 0.5 μs Rise Time

Categories Infrared Photoelectric Sensor
Model Number: S16765-01MS
Place of Origin: Japan
MOQ: 1
Payment Terms: L/C,D/A,D/P,T/T,Western Union,MoneyGram
Supply Ability: 5000pcs
Delivery Time: 3-5work days
Packaging Details: Paper box
Price: Negotiable
Photosensitive Area: 2.8 × 2.4 mm
Number of Pixels: 1
Cooling Method: Non - cooled type
Spectral Response Range: 320 - 1000 nm
Photosensitivity (Typical Value): 0.4 A/W
Rise Time (Typical Value): 0.5 μs
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High Precision Packaging Non-Cooled Type S16765-01MS Infrared Photoelectric Sensor with Low Dark Current and 0.5 μs Rise Time


S16765-01MS Infrared Photoelectric Sensor


General Information:

  • Product Name: Silicon photodiode S16765 - 01MS
  • Brand: Hamamatsu Photonics
  • Package Specification: Plastic package
  • Category: Silicon (Si) photodiode
  • Application Range: Visible to near - infrared range

Performance Parameters:

  • Photosensitive Area: 2.8 × 2.4 mm
  • Number of Pixels: 1
  • Cooling Method: Non - cooled type
  • Spectral Response Range: 320 - 1000 nm
  • Peak Sensitivity Wavelength (Typical Value): 720 nm
  • Photosensitivity (Typical Value): 0.4 A/W
  • Dark Current (Maximum Value): 20 pA
  • Rise Time (Typical Value): 0.5 μs
  • Junction Capacitance (Typical Value): 200 pF
  • Measurement Conditions: Ta = 25°C, typical value. Photosensitivity: λ = λp. Dark current: VR = 1 V. Junction capacitance: VR = 0 V, f = 10 kHz, unless otherwise specified.

Features:

  • Low Dark Current: It can measure from low to high illuminance with high accuracy.
  • Precision Packaging: The pre - molded package can prevent stray light from the side and back of the package from entering the photosensitive area, which is beneficial to improving the measurement accuracy.

Photosensitive Area2.8 × 2.4 mm
Number of Pixels1
PackagePlastic
Cooling MethodNon - cooled type
Spectral Response Range320 - 1000 nm
Peak Sensitivity Wavelength (Typical Value)720 nm
Photosensitivity (Typical Value)0.4 A/W
Dark Current (Maximum Value)20 pA
Rise Time (Typical Value)0.5 μs
Junction Capacitance (Typical Value)200 pF
Measurement Conditions

Ta = 25°C, typical value.Photosensitivity: λ = λp.

Dark current: VR = 1 V. Junction capacitance: VR = 0 V,

f = 10 kHz, unless otherwise specified.



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