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High-Temperature Resistant SiC Forks: Precision Core Components for Semiconductor Manufacturing

Categories Silicon Carbide Ceramic
Brand Name: KeGu
Place of Origin: China
Payment Terms: L/C,D/A,D/P,T/T,Western Union,MoneyGram
Supply Ability: 2,000 pcs/month
Packaging Details: Strong wooden box for Global shipping
Model Number: Customizable
Price: 200-500 yuan/kg
Material: SiC
Composition:SiC: >98%
Color: Black
Density: >3.05g/cm3
Max. Service Temp: 1650°C
Flexural Strength: 3800MPa
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High-Temperature Resistant SiC Forks: Precision Core Components for Semiconductor Manufacturing

Product Description

High-Temperature Resistant Silicon Carbide (SiC) Forks, also known as Pressureless Sintered SiC Robotic Arms, represent a breakthrough in material science for precision automation. Engineered using advanced pressureless sintering technology, these forks deliver unparalleled performance in the most demanding semiconductor manufacturing environments. Composed of high-purity silicon carbide, they offer an exceptional combination of thermal stability, mechanical strength, and corrosion resistance essential for next-generation industrial applications.

Key Properties & Advantages

  • Extreme Temperature Resilience: Withstands operating temperatures up to 1650°C in air, maintaining structural integrity in high-temperature processes.

  • Superior Mechanical Strength: Features high flexural strength (320-400 MPa) from room temperature up to 1300°C, ensuring reliable performance under heavy loads.

  • Exceptional Thermal Management: Offers outstanding thermal conductivity (196 W/m·K at 20°C) combined with low thermal expansion (4.0 x 10⁻⁶/K), providing excellent thermal shock resistance (>350°C).

  • Maximized Durability: Ultra-high hardness (2350 kg/mm² Vickers) and near-zero open porosity ensure exceptional wear resistance and long-term reliability in abrasive environments.

  • Optimized for Precision: High modulus of elasticity (410 GPa) and rigid lightweight design enable minimal deflection and high-precision handling of sensitive substrates like silicon wafers.

Technical Specifications



Physical PropertiesUnitValue (SSiC)
Composition: SiCVol%≥98
Density @ 20°Cg/cm³≥3.05
Open PorosityVol%≈0
Vickers Hardness HV1kg/mm²2350
Rockwell Hardness 45NR45N93
Flexural Strength

- @ 20°CMPa320-400
- @ 1300°CMPa300-400
Thermal Conductivity

- @ 20°CW·m⁻¹·K⁻¹196
- @ 1200°CW·m⁻¹·K⁻¹60
Max. Service Temp (air)°C1650
Thermal Shock Resistance°C>350
Coefficient of Thermal Expansion10⁻⁶/K4.0
Modulus of Elasticity @ RTGPa410

Critical Application Areas

  • Semiconductor Manufacturing: Ideal for wafer handling, transfer, and processing in CVD, LPCVD, diffusion furnaces, and other high-temperature equipment

  • Advanced Thermal Processing: Essential components for high-temperature industrial furnaces and heat treatment systems

  • Aerospace & Defense: Critical parts requiring thermal stability and lightweight durability

  • Nuclear Energy Systems: Components for demanding radiation and high-temperature environments

  • Precision Automation: Robotic arms and end-effectors for cleanroom and harsh environment applications

Performance Benefits

  • Reduced particle generation and contamination in cleanroom environments

  • Minimal thermal deformation for precise positioning accuracy

  • Extended service life compared to quartz and graphite alternatives

  • Reduced maintenance downtime and increased production throughput

  • Excellent resistance to chemical corrosion from process gases and cleaning agents

These SiC forks are specifically engineered to enhance process reliability and yield in precision manufacturing applications where temperature extremes, chemical resistance, and mechanical stability are critical performance factors.



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