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2inch 4inch 6inch 8inch 5×5 mm 10×10 mm 4H-SiC Substrates 3C-N Type MOS Grade

Categories	SiC Substrate
Brand Name:	ZMSH
Model Number:	3C-N SiC
Certification:	rohs
Place of Origin:	CHINA
MOQ:	10pc
Price:	by case
Payment Terms:	T/T
Supply Ability:	1000pc/month
Delivery Time:	in 30days
Packaging Details:	customzied plastic box
Size:	2inch,4inch,6inch,5×5,10×10
Dielectric Constant:	9.7
Surface Hardness:	HV0.3>2500
Density:	3.21 G/cm3
Thermal Expansion Coefficient:	4.5 X 10-6/K
Breakdown Voltage:	5.5 MV/cm
Applications:	Communications, Radar systems

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SHANGHAI FAMOUS TRADE CO.,LTD

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2inch 4inch 6inch 8inch 5×5 mm 10×10 mm 4H-SiC Substrates 3C-N Type MOS Grade

Overview of 3C-SiC Substrates

2inch 4inch 6inch 8inch 5×5 mm 10×10 mm 4H-SiC Substrates 3C-N Type MOS Grade

3C-N type silicon carbide (3C-SiC) substrate is a wide-bandgap semiconductor material based on the cubic crystal structure (3C), fabricated via liquid phase epitaxy (LPE) or physical vapor transport (PVT). It supports standard sizes from 2-inch to 8-inch, as well as custom dimensions (e.g., 5×5 mm, 10×10 mm). Its core advantages include high electron mobility (1,100 cm²/V·s), wide bandgap (3.2 eV), and high thermal conductivity (49 W/m·K), making it ideal for high-frequency, high-temperature, and high-power device applications.

Key Characteristics of 3C-SiC Substrates

1. Electrical Performance

High Electron Mobility: Significantly superior to 4H-SiC (900 cm²/V·s), 3C-SiC substrates reducing conduction losses in devices.
Low Resistivity: ≤0.0006 Ω·cm (N-type), 3C-SiC substrates optimized for low-loss high-frequency circuits.
Wide Bandgap: Withstands voltages up to 10 kV, 3C-SiC substrates suitable for high-voltage scenarios (e.g., smart grids, EVs).

2. Thermal & Chemical Stability

High Thermal Conductivity: 3× higher heat dissipation efficiency than silicon, 3C-SiC substrates operating stably from -200°C to 1,600°C.
Radiation Resistance: 3C-SiC substrates ideal for aerospace and nuclear applications.

3. Process Compatibility

Surface Flatness: λ/10 @632.8 nm, compatible with lithography and dry etching.
Low Defect Density: Micro-tube density <0.1 cm⁻², enhancing device yield.

Core Applications of 3C-SiC Substrates

1. 5G Communications & RF Devices

Millimeter-Wave RF Modules: 3C-SiC substrates enables GaN-on-3C-SiC RF devices for 28 GHz+ bands, improving signal efficiency.
Low-Loss Filters: 3C-SiC substrates reduces signal attenuation, boosting radar and communication sensitivity.

2. Electric Vehicles (EVs)

On-Board Chargers (OBC): 3C-SiC substrates reduces energy loss by 40%, compatible with 800V fast-charging platforms.
Inverters: 3C-SiC substrates cuts 80–90% energy loss, extending driving range.

3. Industrial & Energy Systems

Solar Inverters: Improves conversion efficiency by 1–3%, reducing volume by 40–60% for high-temperature environments.
Smart Grids: Minimizes heat dissipation needs, supporting high-voltage DC transmission.

4. Aerospace & Defense

Radiation-Hardened Devices: Replaces silicon components, extending satellite and rocket system lifespans.
High-Power Radars: 3C-SiC substrates leverages low-loss properties for enhanced detection precision.

3C-SiC Substrates of Material Technical Parameter

Grade	Zero MPD Production Grade (Z Grade)			Standard Production Grade (P Grade)	Dummy Grade (D Grade)
Diameter	145.5 mm–150.0 mm
Thickness	350 μm ±25 μm
Wafer Orientation	Off axis: 2.0°-4.0°toward [1120]± 0.5° for 4H/6H-P, On axis: 〈111〉 ± 0.5° for 3C-N
** Micropipe Density	0 cm⁻²
** Resistivity	p-type 4H/6H-P	≤0.1 Ω·cm			≤0.3 Ω·cm
	n-type 3C-N	≤0.8 mΩ·cm			≤1 mΩ·cm
Primary Flat Orientation	4H/6H-P	{1010} ±5.0°
	3C-N		{110} ±5.0°
Primary Flat Length	32.5 mm ±2.0 mm
Secondary Flat Length	18.0 mm ±2.0 mm
Secondary Flat Orientation	Silicon face up, 90° CW. from Prime flat ±5.0°
Edge Exclusion	3 mm				6 mm
LTV/TIV/Bow/Warp	≤2.5 μm/≤5 μm/≤15 μm/≤30 μm				≤10 μm/≤15 μm/≤25 μm/≤40 μm
* Roughness	Polish Ra≤1 nm
	CMP Ra≤0.2 nm				Ra≤0.5 nm
Edge Cracks By High Intensity Light	None				Cumulative length≤10 mm, single length≤2 mm
* Hex Plates By High Intensity Light	Cumulative area≤0.05%				Cumulative area≤0.1%
* Polytype Areas By High Intensity Light	None				Cumulative area≤3%
Visual Carbon Inclusions	None				Cumulative area≤0.05%
# Silicon Surface Scratches By High Intensity Light	None				Cumulative length≤1×wafer diameter
Edge Chips High By Intensity Light	None permitted≥0.2mm width and depth				5 allowed, ≤1 mm each
Silicon Surface Contamination By High Intensity	None
Packaging	Multi-wafer Cassette or Single Wafer Container

Notes:

* Defects limits apply to entire wafer surface except for the edge exclusion area.

* The scratches should be checked on Si face only.

Recommend other models of SiC

1. 5*5mm/10*10mm Silicon Carbide Wafer Thickness 350μm Sic 3C-N Type High Mechanical Strength Production Grade

2. 4inch 3C N-type SiC Substrate Silicon Carbide Substrate Thick 350um Prime Grade Dummy Grade

3C-SiC Substrates FAQ

Q1: What are the key applications of 2-inch, 4-inch, 6-inch, 8-inch, 5×5mm, and 10×10mm 3C-N-type SiC substrates?

A: They are widely used in 5G RF modules, EV power systems, and high-temperature industrial devices due to their high electron mobility and thermal stability.

Q2: How do 3C-N-type SiC substrates compare to traditional 4H-SiC in performance?

A: 3C-N-type SiC offers lower resistance and better high-frequency performance (up to 2.7×10⁷ cm/s electron velocity), ideal for RF and compact power electronics.

Tag: #Silicon carbide substrate, #3C-N type SIC, #Semiconductor materials, #3C-SiC Substrate, #Product Grade, #5G Communications, #2inch/4inch/6inch/8inch/5×5 mm/10×10 mm, #MOS Grade, #4H-SiC Substrates

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2inch 4inch 6inch 8inch 5×5 mm 10×10 mm 4H-SiC Substrates 3C-N Type MOS Grade

2inch 4inch 6inch 8inch 5×5 mm 10×10 mm 4H-SiC Substrates 3C-N Type MOS Grade

2inch 4inch 6inch 8inch 5×5 mm 10×10 mm 4H-SiC Substrates 3C-N Type MOS Grade

Overview of 3C-SiC Substrates

Key Characteristics of 3C-SiC Substrates

Core Applications of 3C-SiC Substrates

3C-SiC Substrates of Material Technical Parameter

Recommend other models of SiC

3C-SiC Substrates FAQ

4H-SiC substrate MOS grade

5x5 mm SiC substrate

N-type SiC substrate wafer

2inch 4inch 6inch 8inch 5×5 mm 10×10 mm 4H-SiC Substrates 3C-N Type MOS Grade

2inch 4inch 6inch 8inch 5×5 mm 10×10 mm 4H-SiC Substrates 3C-N Type MOS Grade

2inch 4inch 6inch 8inch 5×5 mm 10×10 mm 4H-SiC Substrates 3C-N Type MOS Grade

2inch 4inch 6inch 8inch 5×5 mm 10×10 mm 4H-SiC Substrates 3C-N Type MOS Grade

Overview of 3C-SiC Substrates

​​

​​Key Characteristics​​ of 3C-SiC Substrates

​​Core Applications​​ of 3C-SiC Substrates

3C-SiC Substrates of ​​Material Technical Parameter

Recommend other models of SiC

3C-SiC Substrates​​ FAQ

4H-SiC substrate MOS grade

5x5 mm SiC substrate

N-type SiC substrate wafer

2inch 4inch 6inch 8inch 5×5 mm 10×10 mm 4H-SiC Substrates 3C-N Type MOS Grade

Key Characteristics of 3C-SiC Substrates

Core Applications of 3C-SiC Substrates

3C-SiC Substrates of Material Technical Parameter

3C-SiC Substrates FAQ