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4inch 6inch 8inch SICOI wafer 4H-SiC on insulator 100 to 150 mm sic film ON silicon

SICOI Wafers Overview

4inch 6inch 8inch SICOI wafer 4H-SiC on insulator 100 to 150 mm sic film ON silicon

SICOI (Silicon Carbide on Insulator) wafers represent a high-performance semiconductor substrate material that combines the exceptional physical properties of silicon carbide (SiC) with the electrical isolation advantages of an insulating layer (such as SiO₂ or Si₃N₄). The SICOI structure typically consists of a SiC single-crystal layer, an insulating layer, and a supporting substrate (e.g., Si or SiC). This configuration finds extensive applications in high-power, high-frequency, and high-temperature electronic devices, as well as in RF (Radio Frequency) and MEMS sensor fields.

Compared to conventional SiC wafers, SICOI wafers significantly reduce parasitic capacitance and leakage current through the incorporation of an insulating layer, thereby enhancing device operating frequency and energy efficiency. This technology is particularly suited for applications requiring high voltage resistance, low loss, and superior thermal performance, such as electric vehicles, 5G communications, and aerospace electronics.

SICOI Wafers Key Features

Feature Category	Specific Parameters/Performance	Technical Advantages
Material Structure	SiC single-crystal layer (4H/6H-SiC) + insulating layer (SiO₂/Si₃N₄) + supporting substrate (Si/SiC)	Enables electrical isolation and reduces parasitic effects
Electrical Performance	High breakdown field strength (>3 MV/cm), low dielectric loss	Ideal for high-frequency and high-voltage devices
Thermal Performance	High thermal conductivity (4.9 W/cm·K), high-temperature resistance (>500°C)	Excellent heat dissipation capability, suitable for high-temperature environments
Mechanical Performance	High hardness (Mohs hardness 9.5), low thermal expansion coefficient	Resists mechanical stress and enhances device reliability
Surface Quality	Atomically flat surface (Ra <0.2 nm)	Optimizes epitaxial growth quality and minimizes defects
Insulation Performance	High insulation resistance (>10¹⁴ Ω·cm), low leakage current	Suitable for RF and power devices requiring high isolation
Size and Customization	Supports 4/6/8-inch wafers with customizable thickness (SiC layer: 1-100 μm, insulating layer: 0.1-10 μm)	Meets diverse application requirements

SICOI Wafers Primary Applications

Application Field	Specific Scenarios	Core Advantages
High-Power Electronics	EV inverters, fast-charging stations, industrial power modules	High voltage resistance and low loss improve energy efficiency
RF Devices	5G base station power amplifiers (PAs), millimeter-wave RF frontends	Low parasitic capacitance enables high-frequency operation with minimal loss
MEMS Sensors	High-temperature pressure sensors, inertial navigation devices	Withstands high temperatures and radiation, suitable for harsh environments
Aerospace	Aircraft power systems, satellite communication equipment	High reliability and extreme temperature resistance
Smart Grid	High-voltage direct current (HVDC) transmission, solid-state circuit breakers	High insulation properties reduce energy loss
Optoelectronics	UV LEDs, laser diode substrates	High lattice matching improves device performance

The preparation process of 4H-SiCOI

The fabrication process of 4H-SiCOI and the microresonators with highlighted features.

a Fabrication process of pristine 4H-SiCOI material platform.
b Photograph of a 4-inch wafer-scale 4H-SiCOI substrate fabricated using bonding and thinning method, the failure region is marked.
c Total thickness variation of the 4H-SiCOI substrate.
d Image of a 4H-SiCOI die.
e Flowchart of fabricating a SiC microdisk resonator.
f A scanning electron micrograph (SEM) of the fabricated microdisk resonator.
g Zoom-in SEM image of the sidewall of the resonator. Inset, the atomic force micrograph (AFM) scan of the top surface of the resonator (Scale bar = 1 μm).
h Side view SEM image of the fabricated resonator with parabolic-like shaped upper surface.

SICOI Wafers Q&A

1. Q: What is SICOI wafer?
A: SICOI (Silicon Carbide on Insulator) wafer is an advanced semiconductor substrate combining SiC's high-performance properties with an insulating layer for enhanced electrical isolation in power and RF devices.

2. Q: What are the advantages of SICOI wafers?
A: SICOI wafers offer lower parasitic capacitance, higher breakdown voltage, and better thermal management compared to standard SiC wafers, ideal for 5G and EV applications.

Tag: #4inch 6inch 8inch, #Customized, #4H-SiCOI Wafers, #Composite SiC on Insulator Substrates, #SiC, #SiO2, #Si,#SICOI wafer 4H-SiC on insulato, #100 to 150 mm, #sic film ON silicon, #Consist of some microns of SiC on top of a few microns of SiO2, on top of Si.

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Categories	SiC Substrate
Brand Name:	ZMSH
Model Number:	SICOI Wafers
Certification:	rohs
Place of Origin:	CHINA
MOQ:	25
Price:	by case
Payment Terms:	T/T
Delivery Time:	2-4weeks
Packaging Details:	package in 100-grade cleaning room
Size:	4inch/6inch/8inch
Surface Roughness:	Ra<0.5nm
Fracture Toughness:	3.5 MPa·m¹/²
CTE (4H-SiC):	4.2×10⁻⁶/K
Resistivity (SI):	>1×10⁶ Ω·cm
Applications:	High-Power Electronics,RF Devices

4inch 6inch 8inch SICOI wafer 4H-SiC on insulator 100 to 150 mm sic film ON silicon

4inch 6inch 8inch SICOI wafer 4H-SiC on insulator 100 to 150 mm sic film ON silicon

4inch 6inch 8inch SICOI wafer 4H-SiC on insulator 100 to 150 mm sic film ON silicon

4inch 6inch 8inch SICOI wafer 4H-SiC on insulator 100 to 150 mm sic film ON silicon

SICOI Wafers Key Features

SICOI Wafers Primary Applications

The preparation process of 4H-SiCOI

SICOI Wafers Q&A

4H-SiC wafer on insulator

SICOI wafer 100-150mm

SiC film ON silicon substrate

4inch 6inch 8inch SICOI wafer 4H-SiC on insulator 100 to 150 mm sic film ON silicon

4inch 6inch 8inch SICOI wafer 4H-SiC on insulator 100 to 150 mm sic film ON silicon

4inch 6inch 8inch SICOI wafer 4H-SiC on insulator 100 to 150 mm sic film ON silicon

4inch 6inch 8inch SICOI wafer 4H-SiC on insulator 100 to 150 mm sic film ON silicon

4inch 6inch 8inch SICOI wafer 4H-SiC on insulator 100 to 150 mm sic film ON silicon

SICOI Wafers Key Features

SICOI Wafers Primary Applications

The preparation process of 4H-SiCOI

SICOI Wafers Q&A​

4H-SiC wafer on insulator

SICOI wafer 100-150mm

SiC film ON silicon substrate

4inch 6inch 8inch SICOI wafer 4H-SiC on insulator 100 to 150 mm sic film ON silicon

SICOI Wafers Q&A