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YJJ G12183-010K InGaAs PIN Photodiode Long wavelength Type (cut-off wavelength: 2.6μm)

Categories Infrared Photoelectric Sensor
Brand Name: HAMAMATSU
Model Number: G12183-010K
Place of Origin: Japan
MOQ: 1
Payment Terms: L/C, D/A, D/P, T/T, Western Union, MoneyGram
Supply Ability: 2200
Delivery Time: 3 days
Packaging Details: piping
Photosensitivity (typical value): 1.3 A/W
Dark current (Max.): 30000 nA
Cut-off frequency (typical value): 6 MHz
Junction capacitance (typical value): 500 pF
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YJJ G12183-010K InGaAs PIN Photodiode Long wavelength Type (cut-off wavelength: 2.6μm)

Product Description:

G12183-010K InGaAs PIN Photodiode Long wavelength Type (cut-off wavelength: 2.6μm)


Features:

Long wavelength type (cut-off wavelength: 2.6μm)

peculiarity

- Cut-off wavelength: 2.6μm

- Low cost

- Receiving surface: φ1mm

- Low noise

- High sensitivity

- High reliability

- High speed response

Receiving surface φ1.0mm

Number of pixels 1

Encapsulation metal

Package category TO-18

Heat dissipation uncooled type

Sensitivity wavelength range 0.9 to 2.6 μm

Maximum sensitivity wavelength (typical value) 2.3 μm

Photosensitivity (typical value) 1.3 A/W

Dark current (Max.) 30000 nA

Cut-off frequency (typical value) 6 MHz

Junction capacitance (typical value) 500 pF

Noise equivalent power (typical value) 1×10-12 W/Hz1/2

Typical value of measurement conditions Tc = -25°C, unless otherwise stated, sensitivity: λ = λp, dark current: VR = 0.5V, cut-off frequency: VR = 0V, RL = 50Ω, junction capacitance: VR = 0V, f = 1MHz


Specifications:

Package categoryTO18
Sensitivity wavelength range0.9 to 2.6 μm
Maximum sensitivity wavelength (typical value)2.3 μm
Photosensitivity (typical value)1.3 A/W

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