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| Categories | Infrared Photoelectric Sensor | 
|---|---|
| Brand Name: | HAMAMATSU | 
| Model Number: | S6931-01 | 
| Place of Origin: | Japan | 
| MOQ: | 1 | 
| Payment Terms: | L/C, D/A, D/P, T/T, Western Union, MoneyGram | 
| Supply Ability: | 2200 | 
| Delivery Time: | 3 days | 
| Packaging Details: | piping | 
| Heat dissipation: | uncooled type | 
| Reverse voltage (Max.): | 10V | 
| Sensitivity wavelength range: | 320 to 1000 nm | 
| Maximum sensitivity wavelength (typical value): | 720 nm | 
| Company Info. | 
| ShenzhenYijiajie Electronic Co., Ltd. | 
| Verified Supplier | 
| View Contact Details | 
| Product List | 
Product Description:
S6931-01 Silicon Photodiode In Transparent Plastic Package In Visible To near-Infrared Band
Features:
Silicon photodiode molded into a transparent plastic package
peculiarity
- Visible to near infrared band (suppressed infrared sensitivity type)
Detailed parameter
Receiving surface 2.4 × 2.8 mm
Encapsulation plastic
Package category --
Heat dissipation uncooled type
Reverse voltage (Max.) 10 V
Sensitivity wavelength range 320 to 1000 nm
Maximum sensitivity wavelength (typical value) 720 nm
Photosensitivity (typical value) 0.48 A/W
Dark current (Max.) 20 pA
Rise time (typical value) 0.5μs
Junction capacitance (typical value) 200 pF
Typical values of measurement conditions Ta=25°C, photosensitivity: λ = λp, dark current: VR = 1 V, junction capacitance: VR = 0 V, f = 10 kHz, unless otherwise stated
Spectral sensitivity characteristic
Specifications:
| Photosensitivity (typical value) | 0.48 A/W | 
| Dark current (Max.) | 20 pA | 
| Rise time (typical value) | 0.5μs | 
| Junction capacitance (typical value) | 200 pF | 

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