KES650H12A8L-2M

• High power density with Trench FS IGBT technology

• Low VCE(sat)

• Parallel operation enabled ; symmetrical design & positive temperature coefficient

• Low inductance design

• Integrated NTC temperature sensor

• Isolated baseplate using DBC technology

• Compact and robust design with molded terminals

Internal Circuit Diagram

Specification Parameters

TYPE

VBR Volts

VGS(th) Volts

ID Amps

RDS(on) mΩ

IDSS uA

TJ

Rth(JC) K/W

Ptot Watts

Circuit

Package

Technology

KES400H12A8L-2M

1200V

3.2V

400A

3.7mΩ

200uA

175℃

0.064

2230W

2 Pack

ECDUAL3

SIC MOSFET

KES650H12A8L-2M

1200V

3.2V

650A

2.2mΩ

200uA

175℃

0.064

3200W

2 Pack

SIC MOSFET

  Krunter Future Tech (Dongguan) Co., Ltd. Founded in Songshan Lake Park in 2024, it is an innovative enterprisewith outstanding performance in the feld of technology. Krunter Future focuses on the design, production and salesof lC test sockets. With advanced technology and a strict quality control system, it provides customers withhigh-quality and high-performance test socket solutions, meeting the strict requirements of different industries forchip testing.

  At the same time, Krunter Future Tech is actively involved in the development, production and sales of robotscommited to promoting the development and application of robot technology, and providing intelligent automation solutions for various industries, In addition, Krunter Future also acts as an agent for electronic components suchas chips, resistors, capacitors ,lGBTs, Robots, lt has established long-term and stable cooperative relationships withmany well-known brands to ensure that it provides customers with high-quality and reliable products and comprehensive service support.

  Krunter Future Tech (Dongguan) Co, Ltd. is driven by innovation, based on quality and centered on customers. ltconstantly pursues excellence and contributes to promoting technological progress and industry development.