Slkor MMUN2212

Categories	Single, Pre-Biased Bipolar Transistors
DC Current Gain:	100@10V,5mA
Current - Collector(Ic):	100mA
Operating Temperature:	-65℃~+150℃
type:	NPN
Output Voltage(VO(on)):	200mV
Input Resistor:	61.1kΩ
Resistor Ratio:	1
Pd - Power Dissipation:	200mW
Collector - Emitter Voltage VCEO:	50V
Description:	Pre-Biased Bipolar Transistor (BJT) 50V 100mA 200mW Surface Mount SOT-23
Mfr. Part #:	MMUN2212
Model Number:	MMUN2212
Package:	SOT-23

Contact Now

Add to Cart

Company Info.

Hefei Purple Horn E-Commerce Co., Ltd.

Verified Supplier

View Contact Details

Product List

Haven't found right suppliers
Our buyer assistants can help you find the most suitable, 100% reliable suppliers from China.
And this service is free of charge.
we have buyer assistants who speak English, French, Spanish......and we are ready to help you anytime!

Submit Buying Request

Product Details
Company Profile

Slkor MMUN2212

Product Overview

This series of digital transistors (Bias Resistor Transistors - BRT) integrates a single NPN silicon transistor with a monolithic bias network consisting of a series base resistor and a base-emitter resistor. This integration eliminates the need for external discrete components, reducing system cost and board space. The BRT is housed in a SOT-23 package, suitable for low-power surface mount applications. The modified gull-winged leads are designed to absorb thermal stress during soldering, preventing damage to the die. Available in 8 mm embossed tape and reel packaging.

Advantages:

Simplifies Circuit Design
Reduces Board Space and Component Count
Eliminates external bias resistors

Application:

Low power surface mount applications.

Package Type

SOT-23

Transistor Type

NPN Silicon

Mounting Type

Surface Mount

Packaging

8 mm embossed tape and reel

Device Marking	R1 (k)	R2 (k)	Collector-Emitter Breakdown Voltage (V(BR)CEO)	DC Current Gain (hFE)	Collector-Emitter Saturation Voltage (VCE(sat))	Input Resistor (R1)
MMUN2211 / A8A	10	10	50 Vdc	35 - 100	0.25 Vdc	7.0 k
MMUN2212 / A8B	22	22	50 Vdc	60 - 140	0.25 Vdc	15.4 k
MMUN2213 / A8C	47	47	50 Vdc	80 - 140	0.25 Vdc	32.9 k
MMUN2214 / A8D	10	47	50 Vdc	80 - 350	0.25 Vdc	7.0 k
MMUN2215 / A8E	10		50 Vdc	160 - 350	0.25 Vdc	7.0 k
MMUN2216 / A8F	4.7		50 Vdc	160 - 350	0.25 Vdc	3.3 k
MMUN2230 / A8G	1.0	1.0	50 Vdc	3.0 - 5.0	0.25 Vdc	0.7 k
MMUN2231 / A8H	2.2	2.2	50 Vdc	8.0 - 15	0.25 Vdc	1.5 k
MMUN2232 / A8J	4.7	4.7	50 Vdc	15 - 30	0.25 Vdc	3.3 k
MMUN2233 / A8K	4.7	47	50 Vdc	80 - 200	0.25 Vdc	3.3 k
MMUN2234 / A8L	22	47	50 Vdc	80 - 150	0.25 Vdc	15.4 k
MMUN2235 / A8M	2.2	47	50 Vdc	80 - 140	0.25 Vdc	2.2 k
MMUN2238 / A8R	2.2		50 Vdc	160 - 350	0.25 Vdc	2.2 k
MMUN2241 / A8U	100		50 Vdc	160 - 350	0.25 Vdc	70 k

Characteristic	Symbol	Min	Typ	Max	Unit	Condition
Collector-Base Cutoff Current	ICBO			100	nAdc	VCB = 50 V, IE = 0
Collector-Emitter Cutoff Current	ICEO			500	nAdc	VCE = 50 V, IB = 0
Emitter-Base Cutoff Current	IEBO			0.5	mAdc	VEB = 6.0 V, IC = 0
Collector-Base Breakdown Voltage	V(BR)CBO	50			Vdc	IC = 10 A, IE = 0
Collector-Emitter Breakdown Voltage	V(BR)CEO	50			Vdc	IC = 2.0 mA, IB = 0 (Note 2.)
Collector-Emitter Saturation Voltage	VCE(sat)			0.25	Vdc	IC = 10 mA, IB = 0.3 mA
Total Power Dissipation	PD		200		mW	@ TA = 25C (Note 1.)
Thermal Resistance Junction-to-Ambient	RJA		625		C/W	(surface mounted)
Operating and Storage Temperature Range	TJ, Tstg	65		150	C
Maximum Temperature for Soldering	TL		260		C	Sec (Time in Solder Bath)

2410151050_Slkor-MMUN2212_C41428768.pdf

Slkor MMUN2212

Send your message to this supplier


*From:	Your email address is incorrect!
*To:	Hefei Purple Horn E-Commerce Co., Ltd.
*Subject:	Subject is empty!
*Message:	For the best results, we recommend including the following details: -Self introduction -Required specifications -Inquire about price/MOQ Characters Remaining: (0/3000) Please enter 20 to 3000 characters to contact this supplier!