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BAT68E6327 Schottky Barrier Diode Infineon Technologies RF Schottky Diode

Categories Electronic Components
Brand Name: Infineon Technologies
Model Number: BAT68E6327HTSA1
MOQ: 10
Price: 2.5
Payment Terms: ,T/T
MFR: Infineon Technologies
PN: BAT68E6327HTSA1
Description: RF Diode Schottky - Single 8V 130 mA 150 mW PG-SOT23
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BAT68E6327 Schottky Barrier Diode Infineon Technologies RF Schottky Diode

BAT68E6327 is a Schottky barrier diode from Infineon Technologies,designed for RF and high-frequency applications.

Key Features of BAT68E6327

  1. Electrical Characteristics

    • Peak Reverse Voltage (Vr): 8V

    • Maximum Forward Current (If): 130mA

    • Low Forward Voltage Drop (Vf): 390mV (typ) at 5mA

    • Ultra-Low Capacitance: 1pF @ 0V, 1MHz

  2. High-Frequency Performance

    • Optimized for RF and microwave circuits due to fast switching and low noise

    • Low series resistance (Rs): 10Ω @ 5mA, 10kHz

  3. Package & Reliability

    • SOT-23-3 (SC-59, TO-236-3) surface-mount package

    • Wide temperature range: -55°C to +150°C

    • RoHS compliant & lead-free

Applications

The BAT68E6327 is widely used in:

  • RF signal detection & mixing (e.g., VHF/UHF circuits)

  • Voltage clamping & protection circuits

  • High-speed data networks & wireless communication (e.g., base stations, satellite receivers)

  • Low-power signal rectification in portable electronics

Technical Summary

  • Package: SOT-23-3 (3-pin)

  • Power Dissipation: 150mW max

  • Equivalent Models: BAT68-07W, BAT68-08S (for alternate pinouts)

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