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IRF7342TRPBF N-Channel MOSFET, 40V Vds, 9.1A Id, Low Rds(on), SOIC-8 SMT, RoHS Compliant, Fast Switching for Power Electronics

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IRF7342TRPBF N-Channel MOSFET, 40V Vds, 9.1A Id, Low Rds(on), SOIC-8 SMT, RoHS Compliant, Fast Switching for Power Electronics

Product Introduction of Infineon IRF7103TRPBF N-Channel MOSFETProduct Introduction of Infineon IRF7342TRPBF N-Channel MOSFET

1. Product Overview

Infineon IRF7103342TRPBF is a high-performance N-channel enhancement-mode metal-oxide-semiconductor field-effect transistor (MOSFET) developed by Infineon Technologies AG—a global leader in semiconductor solutions for power management and industrial applications. As a key component in high-efficiency switching circuits, this MOSFET adopts advanced trench gate technology, featuring lower on-resistance (R), high switching speeder drain-source voltage (V), excellent thermal performance, and robust avalanche capability. Designed to control and switch highmedium-current DC signals efficiently, it minimizes power loss during conduction and switching processes. Compliant with industrial-grade reliability standards, it is widely used in power management systems, motor drives, consumer electronics, industrial control, and automotive auxiliary electronics, providing reliable switching solutions for diverse high-efficiency applications requiring 40V voltage tolerance.

2. Core Electrical & Mechanical Parameters

Category
Parameter
Value
Notes
Electrical Characteristics
Drain-Source Voltage (V)
340 V (Max)
Suitable for low-to-medium voltage power systems (e.g., 12V/24V/40V industrial supplies and automotive systems)
Continuous Drain Current (I)
86.5 A (Max, T=25 °C); 5.13.9 A (Max, T=100 °C)
Supports medium-current loads such as small motors, LED arrays and power modules
On-Resistance (R)
Typical 4428 mΩ (V=10 V, I=43.25 A); Max 640 mΩ
LUltra-low conduction loss, significantly improving system energy efficiency
Gate-Source Voltage (V)
±12 V (Max)
Compatible with standard 5V/10V gate drive circuits (e.g., MCU GPIO with level shifters)
Avalanche Energy (E)
Typical 1.25 J
RobustStronger avalanche capability withstands transient voltage spikes
Mechanical & Environmental Characteristics
Package Type
SOT-223 (Surface-Mount Transistor)
6.5 mm × 3.5 mm × 1.5 mm, compact footprint for PCB space-constrained designs
Operating Temperature Range
-55 °C ~ +150 °C (Junction Temperature, T)
Adapts to harsh environments with extreme temperature fluctuations
Thermal Resistance (R)
Typical 50 °C/W
Excellent heat dissipation performance, reducing the need for external heat sinks

3. Core Functional Features

  • Low On-Resistance (R): Typical 44 mΩ R at V=10 V minimizes conduction power loss, significantly improving system energy efficiency. For example, in a 12V/5A application, the conduction loss is only ~1.1 W, which is 30% lower than conventional MOSFETs with 60 mΩ R.
  • Ultra-Low On-Resistance (R): Typical 28 mΩ R at V=10 V minimizes conduction power loss, significantly improving system energy efficiency. For example, in a 12V/5A application, the conduction loss is only ~0.7 W, which is 36% lower than conventional MOSFETs with 44 mΩ R.
  • High Switching Speed: Advanced trench gate technology enables fast turn-on/off times (typical t=10 ns, t=20 ns) at medium gate drive voltage (10 V). This makes it ideal for high-frequency switching applications such as DC-DC converters (200 kHz ~ 1 MHz) and switch-mode power supplies (SMPS).
  • Robust Avalanche Capability: 1.2 J typical avalanche energy (E) provides protection against transient voltage spikes caused by inductive loads (e.g., motors, transformers). This eliminates the need for external clamp diodes, reducing BOM cost and PCB space.
  • Robust Avalanche Capability: 1.5 J typical avalanche energy (E) provides stronger protection against transient voltage spikes caused by inductive loads (e.g., motors, transformers). This eliminates the need for external clamp diodes, reducing BOM cost and PCB space.
  • Excellent Thermal Performance: 50 °C/W typical thermal resistance (R) and SOT-223 package with integrated heatsink pad facilitate efficient heat dissipation. Even at full-load current (8.5 A at 25 °C), the junction temperature rises moderately, avoiding thermal shutdown and ensuring long-term reliability.
  • Wide Voltage & Current Compatibility: 30 V V and 8.5 A I (25 °C) cover most low-to-medium voltage/current applications (e.g., 12V automotive systems, 24V industrial sensors). ±12 V V tolerance prevents gate damage from voltage overshoots in drive circuits.
  • Wide Voltage & Current Compatibility: 40 V V and 6.5 A I (25 °C) cover most low-to-medium voltage/current applications (e.g., 12V automotive systems, 24V/40V industrial sensors). ±12 V V tolerance prevents gate damage from voltage overshoots in drive circuits.
  • Industrial-Grade Reliability: -55 °C ~ +150 °C junction temperature range and rugged SOT-223 package enable stable operation in harsh environments such as industrial workshops, automotive engine bays, and outdoor power equipment. The device passes 1000-hour high-temperature aging tests with a mean time between failures (MTBF) of ≥ 1,000,000 hours.
  • Compact & Easy Integration: SOT-223 surface-mount package with standard pinout (Source, Gate, Drain, Heatsink Pad) simplifies PCB layout. The heatsink pad can be soldered directly to the PCB ground plane for enhanced heat dissipation, requiring no external heat sinks in medium-load applications (≤5 A).

4. Typical Application Scenarios

4.1 Power Management Systems

Used as a high-frequency switching element in DC-DC converters (e.g., buck converters for 12V to 5V/3.3V conversion) and linear regulators. In IoT gateways and industrial controllers, it converts unregulated 12V/24V input to stable 5V for MCUs and sensors. The fast switching speed supports high-frequency operation (500 kHz), reducing the size of inductors and capacitors in the converter.

4.2 Motor Drive Applications

Applied in small DC motor drives (e.g., fans, pumps, toys) and stepper motor controllers. It acts as a high-side or low-side switch to control motor current direction and speed. The low R minimizes power loss during motor operation, while the avalanche capability protects against voltage spikes from motor inductance during turn-off.

4.3 Consumer Electronics

Used in laptop/tablet power adapters, smartphone fast chargers, and household appliances (e.g., air purifiers, small refrigerators). In a 65W laptop adapter, it serves as a primary switching element in the SMPS, delivering high efficiency (≥90%) due to low conduction and switching losses. The compact SOT-223 package fits into slim adapter designs.

4.4 Industrial Control & Automation

Applied in programmable logic controllers (PLCs), sensor power modules, and industrial solenoid drives. It switches power to inductive sensors (e.g., proximity sensors) and small solenoid valves (12V/24V/40V). The wide temperature range (-55 °C ~ +150 °C) adapts to extreme temperatures in factory environments, while the enhanced avalanche capability withstands sensor-induced voltage spikes.

4.5 Automotive Electronics

Used in automotive body control modules (BCMs), LED lighting systems, and auxiliary power units (APUs). It controls the current of interior/exterior LED lights (e.g., dashboard lights, doorheadlamps, dashboard lights) and small motors (e.g., window regulators, mirror adjusters). The 340 V V tolerates automotive battery voltage fluctuations (12V ~ 14.7V)and 40V auxiliary systems, and the high-temperature capability adapts to cabin and engine bay environments.
Product Tags:

N-Channel MOSFET 40V 9.1A

  

Low Rds(on) SOIC-8 MOSFET

  

Fast Switching Power Electronics MOSFET

  
Buy IRF7342TRPBF N-Channel MOSFET, 40V Vds, 9.1A Id, Low Rds(on), SOIC-8 SMT, RoHS Compliant, Fast Switching for Power Electronics at wholesale prices

IRF7342TRPBF N-Channel MOSFET, 40V Vds, 9.1A Id, Low Rds(on), SOIC-8 SMT, RoHS Compliant, Fast Switching for Power Electronics

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