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| Categories | SCRs |
|---|---|
| Holding Current (Ih): | 10mA |
| Current - Gate Trigger(Igt): | 200uA |
| Voltage - On State(Vtm): | 1.7V |
| Current - On State(It(RMS)): | 800mA |
| Peak off - state voltage(Vdrm): | 600V |
| Current - Surge(Itsm@f): | - |
| SCR Type: | - |
| Gate Trigger Voltage (Vgt): | 800mV |
| Operating Temperature: | -40℃~+125℃@(Tj) |
| Description: | 600V 800mA Surface Mount SOT-23 |
| Mfr. Part #: | S6X8BBSRP |
| Model Number: | S6X8BBSRP |
| Package: | SOT-23 |
| Company Info. |
| Hefei Purple Horn E-Commerce Co., Ltd. |
| Verified Supplier |
| View Contact Details |
| Product List |
The SxX8BBS Series EV Series 0.8 Amp Sensitive SCRs are designed for GFCI (Ground Fault Circuit Interrupter) applications. These sensitive SCR components offer 600V VDRM and 0.8A IT(RMS) capability in a compact SOT23 package. They feature glass-passivated junctions for long-term reliability and parametric stability, high dv/dt noise immunity, and a sensitive gate for direct microprocessor interface.
| Part Number | Series | Voltage (VDRM/VRRM) | Current (IT(RMS)) | Gate Trigger Current (IGT) | Package | Packing |
| SxX8BBS Series | EV Series | 600 V | 0.8 A | 200 A | SOT23 | Tape & Reel |
| Parameter | Test Conditions | Value | Unit |
| Peak non-repetitive blocking voltage (VDSM/ VRSM) | Pw=100s | 700 | V |
| RMS on-state current (IT(RMS)) | TC = 80C | 0.8 | A |
| Average on-state current (IT(AV)) | TC = 80C | 0.51 | A |
| Non repetitive surge peak on-state current (ITSM) | f= 50Hz, TJ initial = 25C | 10 | A |
| Non repetitive surge peak on-state current (ITSM) | f= 60Hz, TJ initial = 25C | 12 | A |
| I2t Value for fusing | tp = 10 ms, f= 50 Hz | 0.5 | A2s |
| I2t Value for fusing | tp = 8.3 ms, f= 60 Hz | 0.6 | A2s |
| Critical rate of rise of on-state current (di/dt) | IG = 10mA, 60 Hz, TJ = 125C | 80 | A/s |
| Peak Gate Current (IGM) | tp = 20 s, TJ = 125C | 1.0 | A |
| Average gate power dissipation (PG(AV)) | TJ = 125C | 0.1 | W |
| Storage junction temperature range (Tstg) | -40 to 150 | C | |
| Operating junction temperature range (TJ) | -40 to 125 | C | |
| DC Gate Trigger Current (IGT) | VD = 6V, RL = 100 | MIN. 50, MAX. 200 | A |
| DC Gate Trigger Voltage (VGT) | VD = 6V, RL = 100 | MAX. 0.8 | V |
| Peak Reverse Gate Voltage (VGRM) | IRG = 10A | MIN. 8 | V |
| Holding Current (IH) | Initial Current = 20mA | MAX. 10 | mA |
| Critical Rate-of-Rise of Off-State Voltage ((dv/dt)s) | TJ = 125C, VD = 67%VDRM /VRRM, Exp. Waveform, RGK =1 k | MIN. 50 | V/s |
| Gate Non-Trigger Voltage (VGD) | VD = VDRM, RGK =1 k, TJ = 125C | MIN. 0.2 | V |
| Turn-Off Time (tq) | IT=0.5A | MAX. 25 | s |
| Turn-On Time (tgt) | IG=10mA,Pw= 15sec, IT = 1.6A(pk) | TYP. 2.0 | s |
| Peak On-State Voltage (VTM) | ITM = 1.6A (pk) | MAX. 1.70 | V |
| IDRM/IRRM | TJ = 25C | MAX. 5 | A |
| IDRM/IRRM | TJ = 125C | MAX. 100 | A |
| Junction to case thermal resistance (R(JC)) | (AC) | 45 | C/W |
| Junction to ambient thermal resistance (R(J-A)) | 220 | C/W |
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