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| Categories | TRIACs |
|---|---|
| Holding Current (Ih): | 25mA |
| Voltage - On State(Vtm): | 1.55V |
| Average Gate Power Dissipation (PG(AV)): | 1W |
| Current - On State(It(RMS)): | 12A |
| Peak off - state voltage(Vdrm): | 800V |
| SCR Type: | 1 TRIAC |
| Operating Temperature: | -40℃~+125℃ |
| Gate Trigger Voltage (Vgt): | 1.5V |
| Description: | TRIAC 800V 12A Through Hole TO-220 |
| Mfr. Part #: | BT138-800E |
| Model Number: | BT138-800E |
| Package: | TO-220 |
| Company Info. |
| Hefei Purple Horn E-Commerce Co., Ltd. |
| Verified Supplier |
| View Contact Details |
| Product List |
The BT138 Series TRIACs from ShenZhenHanKingyuan Electronic are 12A, 4-quadrant TRIACs designed for various AC power control applications. They offer features like low gate trigger voltage (VGT: 1.5V) and are available in voltage ratings of 600V and 800V (VDRM/VRRM). These TRIACs are suitable for use in washing machines, vacuum cleaners, massagers, solid-state relays, and AC motor speed regulation.
| Parameter | Conditions | BT138-600 | BT138-800 | Unit |
|---|---|---|---|---|
| Repetitive Peak Off-State Voltage (VDRM/VRRM) | 600 | 800 | V | |
| R.M.S On-State Current (IT(RMS)) | Tc=110C | 12 | 12 | A |
| Surge On-State Current (ITSM) | 115/120 | 115/120 | A | |
| It for fusing | Tp=10ms | 70 | 70 | As |
| Average Gate Power Dissipation (PG(AV)) | Tj=125C | 1 | 1 | W |
| Peak Gate Current (IGM) | tp=20us, Tj=125C | 4 | 4 | A |
| Operating Junction Temperature (Tj) | -40~125 | -40~125 | C | |
| Storage Temperature (TSTG) | -40~150 | -40~150 | C |
| Parameter | Test Conditions | Value (Max) | Unit |
|---|---|---|---|
| Repetitive Peak Off-State Current (IDRM) | Tj=25C | 5 | uA |
| Repetitive Peak Off-State Current (IDRM) | Tj=125C | 1 | mA |
| Repetitive Peak Reverse Current (IRRM) | Tj=25C | 5 | uA |
| Repetitive Peak Reverse Current (IRRM) | Tj=125C | 1 | mA |
| Forward "on" voltage (VTM) | IT=35A, tp=380us | 1.55 | V |
| Gate trigger voltage (VGT) | VD=12V, RL=30 | 1.5 | V |
| Critical-rate of rise of commutation current (di/dt) | I,II,III, Tj=125C, IG=2XIGT, tr 100ns, F=100Hz | 50 | A /us |
| Critical-rate of rise of commutation current (di/dt) | IV, Tj=125C, IG=2XIGT, tr 100ns, F=100Hz | 10 | A /us |
| Gate trigger current (IGT) | I,II,III, VD=12V RL=30 | 5, 10, 25, 50 | mA |
| Gate trigger current (IGT) | IV, VD=12V RL=30 | 10, 25, 70, 100 | mA |
| Holding current (IH) | IT=0.2A | 10, 25, 30, 60 | mA |
| Gate non-trigger voltage (VGD) | ALL, VD=VDRM TJ=125C, RL=3.3K | 0.2 | V |
| Critical-rate of rise of commutation voltage (dv/dt) | TJ=125C, VD=2/3VDRM Gate, tp=10ms | 5, 10, 50, 200 | V/us |
| Critical-rate of rise of commutation voltage (dv/dt) | TJ=125C, VD=2/3VDRM Gate, tp=16.7ms | 5, 10, 50, 200 | V/us |
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