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| Categories | TRIACs |
|---|---|
| Holding Current (Ih): | 200mA |
| Voltage - On State(Vtm): | - |
| Average Gate Power Dissipation (PG(AV)): | - |
| Current - On State(It(RMS)): | 55A |
| Peak off - state voltage(Vdrm): | 1.2kV |
| Current - Surge(Itsm@f): | 550A |
| SCR Type: | 1 SCR |
| Operating Temperature: | -40℃~+125℃ |
| Gate Trigger Voltage (Vgt): | 1.5V |
| Description: | SCR 1200V 55A Through Hole TO-3P |
| Mfr. Part #: | BTW69-1200B |
| Model Number: | BTW69-1200B |
| Package: | TO-3P |
| Company Info. |
| Hefei Purple Horn E-Commerce Co., Ltd. |
| Verified Supplier |
| View Contact Details |
| Product List |
The BTW69 Series Standard SCRs from ShenZhenHanKingyuan Electronic CO.,Ltd are high-performance silicon-controlled rectifiers designed for a variety of power control applications. These SCRs offer a high RMS on-state current of 55A and are available with repetitive peak off-state voltages of 1000V and 1200V. Their robust design and specified electrical characteristics make them suitable for demanding applications such as washing machines, vacuum cleaners, massagers, solid-state relays, and AC motor speed regulation. The TO-3P Insulated package ensures reliable operation and ease of integration.
| Symbol | Parameter | Conditions | BTW69-1000B | BTW69-1200B | BTW69-1600B | Unit |
| VDRM VRRM | Repetitive Peak Off-State Voltage | 1000 | 1200 | 1600 | V | |
| IT(RMS) | R.M.S On-State Current | 55 | A | |||
| IT(AV) | Average On-State Current | 35 | A | |||
| ITSM | Surge On-State Current | F=50Hz,tp=10ms/8.3ms | 550 | A | ||
| It | It for fusing | Tp=10ms | 1500 | As | ||
| PG(AV) | Average Gate Power Dissipation | Tj=125C | 1 | W | ||
| PGM | Peak Gate Power Dissipation | Tj=125C | 10 | W | ||
| IGM | Peak Gate Current | tp=10us | 5 | A | ||
| Tj | Operating Junction Temperature | -40~125 | C | |||
| TSTG | Storage Temperature | -40~150 | C | |||
| IDRM | Repetitive Peak Off-State Current | Tc=125C | ≤8 | mA | ||
| IRRM | Repetitive Peak Reverse Current | Tc=125C | ≤8 | mA | ||
| VTM | Forward "on" voltage | IT=60A | ≤1.8 | V | ||
| VGD | Gate nontrigger voltage | VD=VDRM,Tj=125C, RL=3.3K | ≥0.2 | V | ||
| IL | Latching current | IG=1.2IGT | ≤250 | mA | ||
| IH | Holding current | VD=12V ,IGT=0.1A | ≤200 | mA | ||
| VGT | Gate trigger voltage | VD=12V | ≤1.5 | V | ||
| IGT | Gate trigger current | VD=12V,IT=0.1A | ≤70 | mA | ||
| dv/dt | Critical-rate of rise of commutation voltage | VD=2/3VDRM,Tj=125C,gate open circuit | ≥100 | V/us | ||
| di/dt | Critical-rate of rise of commutation current | IG=2XIG,tr100us, Tj=125C | ≥150 | A/us | ||
| Rth(j-c) | Thermal resistance Junction to case | 0.65 | C/W | |||
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