Compact SOT363 package dual transistor amplifier device GOODWORK BC847BS with NPN NPN configuration

Categories	Single Bipolar Transistors
Emitter-Base Voltage(Vebo):	6V
Current - Collector Cutoff:	15nA
Pd - Power Dissipation:	200mW
Transition frequency(fT):	200MHz
type:	NPN
Current - Collector(Ic):	100mA
Collector - Emitter Voltage VCEO:	45V
Operating Temperature:	-55℃~+150℃@(Tj)
Description:	Bipolar (BJT) Transistor NPN 45V 100mA 200MHz 200mW Surface Mount SOT-363
Mfr. Part #:	BC847BS
Model Number:	BC847BS
Package:	SOT-363

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Hefei Purple Horn E-Commerce Co., Ltd.

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Product Overview

This device is designed for general purpose amplifier applications. It is a dual transistor (NPN+NPN) housed in an SOT-363 package.

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
Collector-Base Voltage	VCBO				50	V
Collector-Emitter Voltage	VCEO				45	V
Emitter-Base Voltage	VEBO				6	V
Collector Current-Continuous	IC				100	mA
Power Dissipation	PD	Ta=25			200	mW
Thermal Resistance. Junction to Ambient	RJA			625		/W
Operation Junction and Storage Temperature Range	TJ,Tstg		-55		+150
Collector-base breakdown voltage	V(BR)CBO	IC=10A,IE=0	50			V
Collector-emitter breakdown voltage	V(BR)CEO	IC=1mA,IB=0	45			V
Emitter-base breakdown voltage	V(BR)EBO	IE=10A,IC=0	6			V
Collector cut-off current	ICBO	VCB=30V,IE=0			15	nA
Emitter cut-off current	IEBO	VEB =4V, IC=0			15	nA
DC current gain*	hFE	VCE=5V,IC=2mA	200		450
Collector-emitter saturation voltage	VCE(sat)(1)	IC=10mA,IB=0.5mA		0.25		V
Collector-emitter saturation voltage	VCE(sat)(2)	IC=100mA,IB=5mA		0.65		V
Base-emitter voltage	VBE(1)	VCE=5V,IC=2mA		0.58	0.7	V
Base-emitter voltage	VBE(2)	VCE=5V,IC=10mA		0.77		V
Transition frequency	fT	VCE=5V,IC=20mA ,f=100MHz		200		MHz
Collector output capacitance	Cob	VCB=10V,IE=0,f=1MHz		2		pF

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