| Sign In | Join Free | My benadorassociates.com |
|
| Sign In | Join Free | My benadorassociates.com |
|
|
| Categories | Single Bipolar Transistors |
|---|---|
| Emitter-Base Voltage(Vebo): | 5V |
| Current - Collector Cutoff: | 15nA |
| Pd - Power Dissipation: | 300mW |
| Transition frequency(fT): | 200MHz |
| type: | PNP |
| Current - Collector(Ic): | 200mA |
| Collector - Emitter Voltage VCEO: | 45V |
| Operating Temperature: | -55℃~+150℃@(Tj) |
| Description: | 300mW PNP 200mA 45V SOT-363 Single Bipolar Transistors RoHS |
| Mfr. Part #: | BCM857BS |
| Model Number: | BCM857BS |
| Package: | SOT-363 |
| Company Info. |
| Hefei Purple Horn E-Commerce Co., Ltd. |
| Verified Supplier |
| View Contact Details |
| Product List |
The BCM857BS is a SOT-363 dual transistor package containing two PNP transistors. This configuration reduces component count and board space while preventing mutual interference between the transistors. It is suitable for applications requiring two PNP transistors in a compact form factor.
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Collector-base breakdown voltage | V(BR)CBO | Ic=-10A,IE=0 | -50 | V | ||
| Collector-emitter breakdown voltage | V(BR)CEO | Ic=-10mA,IB=0 | -45 | V | ||
| Emitter-base breakdown voltage | V(BR)EBO | IE=-10A,IC=0 | -5 | V | ||
| Collector cut-off current | ICBO | VCB=-30V,IE=0 | -15 | nA | ||
| DC current gain | hFE | VCE=-5V,IC=-2mA | 200 | 450 | ||
| Collector-emitter saturation voltage | VCE(sat)(1) | IC=-10mA,IB=-0.5mA | -0.3 | V | ||
| Collector-emitter saturation voltage | VCE(sat)(2) | IC=-100mA,IB=-5mA | -0.65 | V | ||
| Base-emitter voltage | VBE(1) | VCE=-5V,IC=-2mA | -0.6 | -0.75 | V | |
| Base-emitter voltage | VBE(2) | VCE=-5V,IC=-10mA | -0.82 | V | ||
| Transition frequency | fT | VCE=-5V,IC=-10mA,f=100MHz | 200 | MHz | ||
| Collector output capacitance | Cob | VCB=-10V,IE=0,f=1MHz | 3.5 | pF | ||
| Noise figure | NF | VCE=-5V,Ic=-0.2mA, f=1kHZ,Rs=2K,BW=200Hz | 2.5 | dB | ||
| Collector Power Dissipation | PC | Ta=25 | 0.3 | W | ||
| Thermal Resistance Junction to Ambient | RJA | 417 | /W | |||
| Operation Junction and Storage Temperature Range | TJ,Tstg | -55 | +150 |
|
General Purpose Power Amplification Transistor BLUE ROCKET NJW0302GC Silicon PNP Type in TO3P Plastic Package
NPN Transistor CBI MMBT3904 SOT23 Package Epitaxial Planar Die Construction for Electronic Circuits
NPN Bipolar Transistor Guangdong Hottech 2SC1623 L5 with 200mW Power Dissipation and SOT23 Package
Jilin Sino Microelectronics 3DD13003A 126 NPN transistor for high frequency switching power supplies
Durable NPN silicon transistor Minos TIP41C designed for audio power amplification in TO220 package
Automotive Grade NPN Transistor YANGJIE MMBT3904Q with UL94 V0 Flammability and AECQ101 Qualification
Epitaxial silicon planar PNP transistor for switching applications RoHS compliant GOODWORK 2SA1015
General Purpose PNP Transistor LRC LBC856BWT1G SOT323 Package RoHS Compliant Suitable for Amplifiers
Silkor 2N3906 General Purpose PNP Silicon Transistor TO92 Package Ideal for Low Current Applications
Medium power NPN transistor UTC 2N6718G-B-AB3-R featuring 100V voltage and 850mW power dissipation for amplifier switching
