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| Categories | Single Bipolar Transistors |
|---|---|
| Current - Collector Cutoff: | 10uA |
| Pd - Power Dissipation: | 1.75W |
| DC Current Gain: | 1000@4A,4V |
| type: | NPN |
| Current - Collector(Ic): | 8A |
| Collector - Emitter Voltage VCEO: | 100V |
| Description: | 1.75W 1000@4A,4V NPN 8A 100V TO-252 Single Bipolar Transistors RoHS |
| Mfr. Part #: | MJD122 |
| Model Number: | MJD122 |
| Package: | TO-252 |
| Company Info. |
| Hefei Purple Horn E-Commerce Co., Ltd. |
| Verified Supplier |
| View Contact Details |
| Product List |
The MJD122 M is a TO-252 Plastic-Encapsulate Transistor featuring high DC current gain and a built-in damper diode at the E-C junction. It is electrically similar to the popular TIP122 and complementary to the MJD127.
| Parameter | Symbol | Conditions | Min | Typ | Max | Unit |
| Collector-base voltage | BVCBO | 100 | V | |||
| Collector-emitter voltage | BVCEO | 100 | V | |||
| Emitter-base voltage | BVEBO | 5 | V | |||
| Collector current (DC) | IC | 8 | A | |||
| Collector current (Pulse) | ICP | 8 | A | |||
| Collector Dissipation (TA =25 ) | PC | 1.75 | W | |||
| Collector Dissipation (TC =25 ) | PC | 20 | W | |||
| Junction Temperature | Tj | 150 | ||||
| Storage Temperature | Tstg | -55 | 150 | |||
| Collector cut-off current | ICBO | VCB = 100V, IE = 0 | 10 | A | ||
| Collector cut-off current | ICEO | VCE = 50V, IE = 0 | 10 | A | ||
| Emitter cut-off current | IEBO | VEB = 5V, IC = 0 | 2 | mA | ||
| DC current gain* | hFE | VCE= 4V, IC= 4A | 1000 | |||
| DC current gain* | hFE | VCE= 4V, IC= 8A | 500 | |||
| Collector-emitter saturation voltage* | VCE(sat) | IC =4A, IB = 16mA | 2 | V | ||
| Collector-emitter saturation voltage* | VCE(sat) | IC =8A, IB = 80mA | 4 | V | ||
| Baser-emitter saturation voltage* | VBE(sat) | IC =8A, IB = 80mA | 4.5 | V | ||
| Base-emitter on voltage* | VBE (on) | VCE= 4V, IC= 4A | 2.8 | V | ||
| Output capacitance | Cob | VCB= 10V, f=1MHz | 200 | pF |
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