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Electronic Applications PNP Silicon Transistor JSMSEMI S8550 Featuring Defined Electrical Parameters

Categories Single Bipolar Transistors
Emitter-Base Voltage(Vebo): 5V
Current - Collector Cutoff: 100nA
Pd - Power Dissipation: 625mW
Transition frequency(fT): 150MHz
type: PNP
Number: 1 PNP
Current - Collector(Ic): 500mA
Collector - Emitter Voltage VCEO: 25V
Description: Bipolar (BJT) Transistor PNP 25V 500mA 150MHz 625mW Through Hole TO-92
Mfr. Part #: S8550
Model Number: S8550
Package: TO-92
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Electronic Applications PNP Silicon Transistor JSMSEMI S8550 Featuring Defined Electrical Parameters

Product Overview

The S8550 is a PNP Silicon General Purpose Transistor designed for various electronic applications. It offers reliable performance with clearly defined electrical characteristics and absolute maximum ratings.

Product Attributes

  • Brand: JSMICRO Semiconductor
  • Complementary to: S8050

Technical Specifications

ParameterSymbolMin.Typ.Max.UnitTest Conditions
Collector-base Breakdown VoltageV(BR)CBO-40--VIC = -100 A, IE = 0
Collector-emitter Breakdown VoltageV(BR)CEO-25--VIC = -1 mA, IB = 0
Emitter-base Breakdown VoltageV(BR)EBO-5--VIE = -100 A, IC = 0
Collector Cut-off CurrentICBO---0.1AVCB = -40 V, IE = 0
Collector Cut-off CurrentICEO---0.1AVCE = -20 V, IB = 0
Emitter Cut-off CurrentIEBO---0.1AVEB = -3 V, IC = 0
DC Current GainhFE(1)85-400-VCE = -1 V, IC = -50 mA
DC Current GainhFE(2)50---VCE = -1 V, IC = -500 mA
Collector-emitter Saturation VoltageVCE(sat)---0.6VIC = -500 mA, IB = -50 mA
Base-emitter Saturation VoltageVBE(sat)---1.2VIC = -500 mA, IB = -50 mA
Transition FrequencyfT150--MHzVCE = -6 V, IC= -20 mA, f = 30 MHz

hFE Classification

RankRange
B85 - 160
C120 - 200
D160 - 300

Absolute Maximum Ratings

ParameterSymbolRatingsUnit
Collector to Base VoltageVCBO-40V
Collector to Emitter VoltageVCEO-25V
Emitter to Base VoltageVEBO-5V
Collector CurrentIC-500mA
Total Power DissipationPD625mW
Junction, Storage TemperatureTJ, TSTG+150, -55 ~ +150

2401050928_JSMSEMI-S8550_C2931493.pdf

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