Power Factor Correction Diode REASUNOS RSS08065F with Silicon Carbide Material and TO220F Package Design

Categories	Single Diodes
Non-Repetitive Peak Forward Surge Current:	105A
Operating Junction Temperature Range:	-55℃~+175℃
Diode Configuration:	1 Independent
Voltage - DC Reverse (Vr) (Max):	650V
Voltage - Forward(Vf@If):	1.3V@10A
Reverse Leakage Current (Ir):	20uA@650V
Current - Rectified:	8A
Description:	105A 1 Independent 650V 1.3V@10A 8A TO-220F Single Diodes RoHS
Mfr. Part #:	RSS08065F
Model Number:	RSS08065F
Package:	TO-220F

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Hefei Purple Horn E-Commerce Co., Ltd.

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Power Factor Correction Diode REASUNOS RSS08065F with Silicon Carbide Material and TO220F Package Design

Product Overview

The RSS08065F is a Silicon Carbide Schottky Diode designed for applications such as Power Factor Correction, Server Mode Power Supplies, and Uninterruptible Power Supplies. It features low forward voltage drop, high-speed switching, and a positive temperature coefficient, ensuring temperature-independent switching behavior.

Product Attributes

Brand: Reasunos
Material: Silicon Carbide
Package: TO-220F

Technical Specifications

Part Number	Package	Marking	Packing	Qty.	VRRM (V)	IF (A) @ TC=120	QC (nC)
RSS08065F	TO-220F	RSS08065F	Tube	50 PCS	650	8	28

Symbol	Parameter	Value	Unit	Test Conditions	Note
VRRM	Repetitive Peak Reverse Voltage	650	V
VRSM	Surge Peak Reverse Voltage	650	V
VR	DC Blocking Voltage	650	V
IF	Forward Current	8	A	TC = 120
IFSM	Non-Repetitive Forward Surge Current	105	A	TC = 25, tp = 10ms Half Sine Wave
IF,Max	Non-Repetitive Peak Forward Surge Current	840	A	TC=25C, tP= 10 s, Pulse
IFRM	Repetitive Peak Forward Surge Current	80	A	TC = 25, tp = 10ms Half Sine Wave
Ptot	Power Dissipation	55.6 / 24.1	W	TC = 25 / TC = 110
TC	Maximum Case Temperature	153
TJ,TSTG	Operating Junction and Storage Temperature	-55 to175

Symbol	Parameter	Typ.	Max.	Unit	Test Conditions	Note
VF	Forward Voltage	1.3 / 1.6	1.75 / 2.0	V	IF = 10A, TJ = 25 / IF = 10A, TJ = 175
IR	Reverse Current	1 / 20	20 / 200	A	VR = 650V, TJ = 25 / VR = 650V, TJ = 175
C	Total Capacitance	550 / 53 / 48		pF	VR=0V, TJ = 25, f=1MHz / VR=200V, TJ = 25, f=1MHz / VR=400V, TJ = 25, f = 1MHz
QC	Total Capacitive Charge	28		nC	VR =400V,IF=10A,TJ = 25	Qc= 0 VR C V dV Ec
Ec	Capacitance Stored Energy	7.0		J	VR =400V

Symbol	Parameter	Typ.	Unit	Note
RJC	Thermal Resistance from Junction to Case	2.7	/W

2509121150_REASUNOS-RSS08065F_C51904690.pdf

Power Factor Correction Diode REASUNOS RSS08065F with Silicon Carbide Material and TO220F Package Design

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