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| Categories | Single Bipolar Transistors |
|---|---|
| Emitter-Base Voltage(Vebo): | 5V |
| Current - Collector Cutoff: | 100nA |
| Pd - Power Dissipation: | 300mW |
| Transition frequency(fT): | 150MHz |
| type: | PNP |
| Current - Collector(Ic): | 500mA |
| Collector - Emitter Voltage VCEO: | 25V |
| Description: | Bipolar (BJT) Transistor PNP 25V 0.5A 150MHz 0.3W Surface Mount SOT323 |
| Mfr. Part #: | S8550W |
| Model Number: | S8550W |
| Package: | SOT323 |
| Company Info. |
| Hefei Purple Horn E-Commerce Co., Ltd. |
| Verified Supplier |
| View Contact Details |
| Product List |
This PNP transistor, complementary to the S8050, offers a collector current of 0.5A. It is suitable for various electronic applications requiring a PNP semiconductor component. The device is marked as 2TY and comes in a SOT-323 package.
| Parameter | Symbol | Test Conditions | Min | Max | Units |
|---|---|---|---|---|---|
| MAXIMUM RATINGS (TA=25 unless otherwise noted) | |||||
| Collector-Base Voltage | VCBO | -40 | V | ||
| Collector-Emitter Voltage | VCEO | -25 | V | ||
| Emitter-Base Voltage | VEBO | -5 | V | ||
| Collector Current - Continuous | IC | -0.5 | A | ||
| Collector Power Dissipation | PC | 0.3 | W | ||
| Junction Temperature | Tj | 150 | |||
| Storage Temperature | Tstg | -55 | 150 | ||
| ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) | |||||
| Collector-base breakdown voltage | V(BR)CBO | IC = -100A, IE=0 | -40 | V | |
| Collector-emitter breakdown voltage | V(BR)CEO | IC =-1mA, IB=0 | -25 | V | |
| Emitter-base breakdown voltage | V(BR)EBO | IE= -100A, IC=0 | -5 | V | |
| Collector cut-off current | ICBO | VCB= -40V, IE=0 | -0.1 | A | |
| Collector cut-off current | ICEO | VCE= -20V, IB=0 | -0.1 | A | |
| Emitter cut-off current | IEBO | VEB= -3V, IC=0 | -0.1 | A | |
| DC current gain | hFE(1) | VCE= -1V, IC= -50mA | 120 | 400 | |
| DC current gain | hFE(2) | VCE= -1V, IC= -500mA | 50 | ||
| Collector-emitter saturation voltage | VCE(sat) | IC=-500mA, IB= -50mA | -0.6 | V | |
| Base-emitter saturation voltage | VBE(sat) | IC=-500mA, IB= -50mA | -1.2 | V | |
| Transition frequency | fT | VCE= -6V, IC= -20mA, f=30MHz | 150 | MHz | |
| CLASSIFICATION OF hFE(1) | |
|---|---|
| Rank | Range |
| L | 120-200 |
| H | 200-350 |
| J | 300-400 |
|
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