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| Categories | Single Bipolar Transistors |
|---|---|
| Emitter-Base Voltage(Vebo): | 5V |
| Current - Collector Cutoff: | 100nA |
| Pd - Power Dissipation: | 300mW |
| Transition frequency(fT): | 150MHz |
| type: | NPN |
| Current - Collector(Ic): | 500mA |
| Collector - Emitter Voltage VCEO: | 25V |
| Operating Temperature: | - |
| Description: | Bipolar (BJT) Transistor NPN 25V 500mA 150MHz 300mW Surface Mount SOT-23 |
| Mfr. Part #: | S8050 |
| Model Number: | S8050 |
| Package: | SOT-23 |
| Company Info. |
| Hefei Purple Horn E-Commerce Co., Ltd. |
| Verified Supplier |
| View Contact Details |
| Product List |
The S8050 is a high-performance NPN bipolar transistor from High Diode Semiconductor, designed for general-purpose applications. Packaged in a compact SOT-23, it offers excellent characteristics for various electronic circuits.
| Symbol | Parameter | Test Conditions | Min | Typ | Max | Unit |
| VCBO | Collector-Base Voltage | IC= 100A, IE=0 | 40 | V | ||
| VCEO | Collector-Emitter Voltage | IC=1mA, IB=0 | 25 | V | ||
| VEBO | Emitter-Base Voltage | IE=100A, IC=0 | 5 | V | ||
| IC | Collector Current | 500 | mA | |||
| PC | Collector Power Dissipation | 300 | mW | |||
| RJA | Thermal Resistance From Junction To Ambient | 417 | /W | |||
| Tj | Junction Temperature | 150 | ||||
| Tstg | Storage Temperature | -55 | +150 | |||
| V(BR)CBO | Collector-base breakdown voltage | IC= 100A, IE=0 | 40 | V | ||
| V(BR)CEO | Collector-emitter breakdown voltage | IC=1mA, IB=0 | 25 | V | ||
| V(BR)EBO | Emitter-base breakdown voltage | IE=100A, IC=0 | 5 | V | ||
| ICBO | Collector cut-off current | VCB=40 V , IE=0 | 0.1 | A | ||
| ICEO | Collector cut-off current | VCB=20V , IE=0 | 0.1 | A | ||
| IEBO | Emitter cut-off current | VEB= 5V , IC=0 | 0.1 | A | ||
| hFE(1) | DC current gain | VCE=1V, IC= 50mA | 120 | 400 | ||
| hFE(2) | DC current gain | VCE=1V, IC= 500mA | 50 | |||
| VCE(sat) | Collector-emitter saturation voltage | IC=500 mA, IB= 50mA | 0.6 | V | ||
| VBE(sat) | Base-emitter saturation voltage | IC=500 mA, IB= 50mA | 1.2 | V | ||
| fT | Transition frequency | VCE=6V, IC= 20mA, f=30MHz | 150 | MHz |
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