| Sign In | Join Free | My benadorassociates.com |
|
| Sign In | Join Free | My benadorassociates.com |
|
|
| Categories | Single Bipolar Transistors |
|---|---|
| Pd - Power Dissipation: | 100mW |
| Transition frequency(fT): | 45GHz |
| type: | NPN |
| Number: | 1 NPN |
| Current - Collector(Ic): | 40mA |
| Collector - Emitter Voltage VCEO: | 2.5V |
| Description: | Bipolar (BJT) Transistor NPN 2.5V 40mA 45GHz 100mW Surface Mount SOT-343 |
| Mfr. Part #: | BFP520H6327 |
| Model Number: | BFP520H6327 |
| Package: | SOT-343 |
| Company Info. |
| Hefei Purple Horn E-Commerce Co., Ltd. |
| Verified Supplier |
| View Contact Details |
| Product List |
Infineon's RF transistors offer robust, flexible, and reliable solutions for complementary wireless applications. They are designed to enhance system sensitivity, improve interference immunity, and ensure stable signal reception and transmission across multiple bands. With a focus on performance, versatility, supply security, and quality, these transistors are ideal for next-generation mobile systems, infrastructure, and automotive applications.
| Product Series/Generation | Key Features | Technical Benefits | Customer Benefits | Frequency Range | NFmin (dB) | fT (max) (GHz) | Gmax (dB) | OP1dB (dBm) | OIP3 (dBm) | Current Consumption (mA) | ESD Robustness |
|---|---|---|---|---|---|---|---|---|---|---|---|
| RF Transistors 7th Generation (B7HF) | Discrete Heterojunction Bipolar Transistors (HBT) for LNA solutions | Enhanced high-frequency characteristics, reduced parasitic capacitance | Increased RF link budget and SNR, wider coverage, higher order modulation support | 450 MHz to 12 GHz | 0.45 (sub-GHz) to 0.9 (5.5 GHz) | 44 | 19 (at 10 GHz) | +8.5 (at 2.4 GHz) | +19 (at 2.4 GHz) | 13 (at 2.4 GHz) | 1.5 kV HBM |
| RF Transistors 8th Generation (B9HF) | Discrete Heterojunction Bipolar Transistors (HBT) for high-performance LNA solutions | Reduced parasitic capacitance, improved high-frequency characteristics | Increased RF link budget and SNR, support for very high throughput wireless specifications | (Not explicitly specified, but implied to be higher than 7th gen) | 0.6 (at 5.5 GHz) | 80 | (Not explicitly specified, but implied to be higher than 7th gen) | (Not explicitly specified) | (Not explicitly specified) | (Not explicitly specified) | (Not explicitly specified) |
|
General Purpose Power Amplification Transistor BLUE ROCKET NJW0302GC Silicon PNP Type in TO3P Plastic Package
NPN Transistor CBI MMBT3904 SOT23 Package Epitaxial Planar Die Construction for Electronic Circuits
NPN Bipolar Transistor Guangdong Hottech 2SC1623 L5 with 200mW Power Dissipation and SOT23 Package
Jilin Sino Microelectronics 3DD13003A 126 NPN transistor for high frequency switching power supplies
Durable NPN silicon transistor Minos TIP41C designed for audio power amplification in TO220 package
Automotive Grade NPN Transistor YANGJIE MMBT3904Q with UL94 V0 Flammability and AECQ101 Qualification
Epitaxial silicon planar PNP transistor for switching applications RoHS compliant GOODWORK 2SA1015
General Purpose PNP Transistor LRC LBC856BWT1G SOT323 Package RoHS Compliant Suitable for Amplifiers
Silkor 2N3906 General Purpose PNP Silicon Transistor TO92 Package Ideal for Low Current Applications
Medium power NPN transistor UTC 2N6718G-B-AB3-R featuring 100V voltage and 850mW power dissipation for amplifier switching
