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PNP Silicon Transistor Array Infineon BC856S E6327 with High Current Gain and Low Saturation Voltage

Categories Single Bipolar Transistors
Current - Collector Cutoff: 15nA
Pd - Power Dissipation: 250mW
Transition frequency(fT): 250MHz
type: PNP
Current - Collector(Ic): 100mA
Collector - Emitter Voltage VCEO: 65V
Operating Temperature: -
Description: 250mW PNP 100mA 65V SOT-363 Single Bipolar Transistors RoHS
Mfr. Part #: BC856S E6327
Model Number: BC856S E6327
Package: SOT-363
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PNP Silicon Transistor Array Infineon BC856S E6327 with High Current Gain and Low Saturation Voltage

Product Overview

The BC856S/U and BC857S are PNP Silicon AF Transistor Arrays designed for AF input stages and driver applications. They offer high current gain, low collector-emitter saturation voltage, and feature two internally isolated transistors with good matching in a single package. These devices are Pb-free (RoHS compliant) and qualified according to AEC Q101.

Product Attributes

  • Brand: Infineon Technologies
  • Certifications: AEC Q101, Pb-free (RoHS compliant)

Technical Specifications

TypeMarkingPackageVCEO (V)VCBO (V)VEBO (V)IC (mA)ICM (mA)Ptot (mW) @ TSTj (C)Tstg (C)RthJS (K/W)V(BR)CEO (V)V(BR)CBO (V)V(BR)EBO (V)ICBO (A)hFEVCEsat (mV)VBEsat (mV)VBE(ON) (mV)fT (MHz)Ccb (pF)Ceb (pF)h11e (k)h12eh21eh22e (S)F (dB)
BC856S3DsSOT36365805100200250 @ 115C150-65 to 150140658050.015 (max)200-63075-300700-850600-8202501.584.52x10-43303010
BC856U3DsSOT36365805100200250 @ 115C150-65 to 150130658050.015 (max)200-63075-300700-850600-8202501.584.52x10-43303010
BC857S3CsSOT36345505100200250 @ 118C150-65 to 150140455050.015 (max)250-290250-650-7502501.58-----

2410121720_Infineon-BC856S-E6327_C3200377.pdf

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