power transistor Jilin Sino Microelectronics 3DD13003E1D 92 FJ for electronic ballast and lighting

Categories	Single Bipolar Transistors
Emitter-Base Voltage(Vebo):	9V
Current - Collector Cutoff:	5uA
Pd - Power Dissipation:	1W
Transition frequency(fT):	-
type:	NPN
Current - Collector(Ic):	1.5A
Collector - Emitter Voltage VCEO:	400V
Operating Temperature:	-
Description:	Bipolar (BJT) Transistor NPN 400V 1.5A 1W Through Hole TO-92-3
Mfr. Part #:	3DD13003E1D-92-FJ
Model Number:	3DD13003E1D-92-FJ
Package:	TO-92-3

Contact Now

Add to Cart

Company Info.

Hefei Purple Horn E-Commerce Co., Ltd.

Verified Supplier

View Contact Details

Product List

Haven't found right suppliers
Our buyer assistants can help you find the most suitable, 100% reliable suppliers from China.
And this service is free of charge.
we have buyer assistants who speak English, French, Spanish......and we are ready to help you anytime!

Submit Buying Request

Product Details
Company Profile

power transistor Jilin Sino Microelectronics 3DD13003E1D 92 FJ for electronic ballast and lighting

Product Overview

The 3DD13003E1D is a high voltage, fast-switching NPN power transistor designed for various power applications. It offers high breakdown voltage, high current capability, high switching speed, and high reliability, making it suitable for energy-saving lights, electronic ballasts, high-frequency switching power supplies, and general power amplification circuits. This product is RoHS compliant and available in TO-92 package with both standard and halogen-free options.

Product Attributes

Brand: Jilin Sino-microelectronics co., Ltd
Origin: China
Material: Not specified
Color: Not specified
Certifications: RoHS (Halogen Free option available)

Technical Specifications

Order Code	Marking	Halogen Free	Package	Packaging	IC (A)	VCEO (V)	PC (TO-92) (W)
3DD13003E1D-O-T-B-A	13003E1D	NO	TO-92	Brede	1.5	400	1
3DD13003E1D-O-T-N-C	13003E1D	NO	TO-92	Bag	1.5	400	1
3DD13003E1D-R-T-B-A	13003E1D	YES	TO-92	Brede	1.5	400	1
3DD13003E1D-R-T-N-C	13003E1D	YES	TO-92	Bag	1.5	400	1

Electrical Characteristics

Parameter	Symbol	Tests conditions	Min Value	Typ Value	Max Value	Unit
Collector-Emitter Voltage (VBE=0)	VCES				700	V
Collector-Emitter Voltage (IB=0)	VCEO		400	470		V
Emitter-Base Voltage	VEBO	IE=1mA,Ic=0	9	16		V
Collector Current (DC)	IC				1.5	A
Collector Current (pulse)	ICP				3.0	A
Total Dissipation (TO-92)	PC				1	W
Junction Temperature	Tj				150
Storage Temperature	Tstg		-55~+150
Breakdown Voltage CEO	V(BR)CEO	Ic=10mA,IB=0	400	470		V
Breakdown Voltage CBO	V(BR)CBO	Ic=1mA,IE=0	700	800		V
Collector Cut-off Current	ICBO	VCB=700V, IE=0			5	A
Emitter Cut-off Current	IEBO	VEB=7V, IC=0			5	A
DC Current Gain	hFE	VCE=10V, IC=100mA	19	22	25	-
DC Current Gain	hFE	VCE=5V, IC=1.5A		3.0	7.0	-
Collector-Emitter Saturation Voltage	VCE(sat)	IC=0.5A, IB=100mA		0.2	0.8	V
Base-Emitter Saturation Voltage	VBE(sat)	IC=0.5A, IB=100mA		0.9	1.2	V
Switching Time	ts	IC=0.1A	2.5	-	4.5	S

Thermal Characteristic

Parameter	Symbol	Value(min)	Value(max)	Unit
Thermal Resistance Junction Ambient (TO-92)	Rth(j-a)	-	125	/W

2410121225_Jilin-Sino-Microelectronics-3DD13003E1D-92-FJ_C272503.pdf

power transistor Jilin Sino Microelectronics 3DD13003E1D 92 FJ for electronic ballast and lighting

Send your message to this supplier


*From:	Your email address is incorrect!
*To:	Hefei Purple Horn E-Commerce Co., Ltd.
*Subject:	Subject is empty!
*Message:	For the best results, we recommend including the following details: -Self introduction -Required specifications -Inquire about price/MOQ Characters Remaining: (0/3000) Please enter 20 to 3000 characters to contact this supplier!