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| Categories | Single Bipolar Transistors |
|---|---|
| Emitter-Base Voltage(Vebo): | 11V |
| Current - Collector Cutoff: | 100uA |
| Pd - Power Dissipation: | 80W |
| Transition frequency(fT): | 4MHz |
| type: | NPN |
| Number: | - |
| Current - Collector(Ic): | 8A |
| Collector - Emitter Voltage VCEO: | 400V |
| Operating Temperature: | -55℃~+150℃@(Tj) |
| Description: | Bipolar (BJT) Transistor NPN 400V 8A 4MHz 80W Through Hole ITO-220AB |
| Mfr. Part #: | D13007MF |
| Model Number: | D13007MF |
| Package: | ITO-220AB |
| Company Info. |
| Hefei Purple Horn E-Commerce Co., Ltd. |
| Verified Supplier |
| View Contact Details |
| Product List |
The D13007MF is a high power NPN bipolar transistor designed for electronic ballasts and general power amplifier circuits. It features high frequency power conversion, high switching speed, high reliability, high current capacity, and high withstand voltage, utilizing advanced planar process technology and triple diffusion technology for an optimal balance between current capacity and endurance.
| Symbol | Item | Test Conditions | Minimum and maximum values | Unit |
| VCBO | Collector-Base DC Voltage | 700 | V | |
| VCEO | Collector-Emitter DC Voltage | 400 | V | |
| VEBO | Emitter-Base DC Voltage | 8 | V | |
| Ic | Maximum Collector DC Current | 11 | A | |
| Pc | Maximum Collector Power Dissipation | 150 | W | |
| Tj | Maximum Junction Temperature | 150 | C | |
| Ts | Storage Temperature | -55~+150 | C | |
| VCE(sat)(1) | Collector emitter saturation voltage drop | IC=2A, IB=0.4A | 1.2 | V |
| VCE(sat)(2) | Collector emitter saturation voltage drop | IC=8A, IB=2A | 1.56 | V |
| VBE(sat) | Base emitter saturation voltage drop | IC=8A, IB=2A | 2.5 | V |
| hFE(1) | DC Current Gain | IC=2A, IB=0.5A | 50 | |
| hFE(2) | DC Current Gain | IC=5A, IB=2A | 70 | |
| tf | Fall time | IC=5A, VCC=24V | 0.7 | S |
| tr | Rise time | S | ||
| ts | Storage time | IB1=-IB2=11A | 1.2 | S |
| VCEO(SUS) | Collector-Emitter Holding Voltage | Ic=10mA,IB=0 | 400 | V |
| V(BR)CBO | Collector-Base Breakdown Voltage | Ic=1mA,IB=0 | 700 | V |
| V(BR)EBO | Emitter-Base Breakdown Voltage | IE=1mA,Ic=0 | 7 | V |
| ICBO | Collector-Base Reverse Leakage Current | VCB=700V, IE=0 | 0.5 | mA |
| ICEO | Collector-Emitter Reverse Leakage Current | VCE=430V,IB=0 | 0.1 | mA |
| IEBO | Emitter-Base Reverse Leakage Current | VEB=7V, IC=0 | 1 | mA |
| f | Characteristic frequency | VCE=5V, IC=5A | 5 | MHz |
| Rth(jc) | Project junction to case thermal resistance | 1.2 | V /W |
|
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