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NPN Transistor SOT-23 Package Featuring MDD Microdiode Semiconductor 2SC1815 for Electronic Circuits

Categories Single Bipolar Transistors
Emitter-Base Voltage(Vebo): 5V
Current - Collector Cutoff: 100nA
Pd - Power Dissipation: 200mW
Transition frequency(fT): 80MHz
type: NPN
Number: 1 NPN
Current - Collector(Ic): 150mA
Collector - Emitter Voltage VCEO: 50V
Operating Temperature: -55℃~+150℃
Description: Bipolar (BJT) Transistor NPN 50V 150mA 80MHz 200mW Surface Mount SOT-23
Mfr. Part #: 2SC1815
Model Number: 2SC1815
Package: SOT-23
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NPN Transistor SOT-23 Package Featuring MDD Microdiode Semiconductor 2SC1815 for Electronic Circuits

The 2SC1815 is an NPN plastic-encapsulated transistor designed for general-purpose applications. It features a SOT-23 package and is suitable for various electronic circuits.

Product Attributes

  • Brand: microdiode
  • Package Type: SOT-23

Technical Specifications

ParameterSymbolTest ConditionsValueUnit
Collector to Base VoltageVCBO60V
Collector to Emitter VoltageVCEO50V
Emitter to Base VoltageVEBO5V
Collector CurrentIC150mA
Power DissipationPC200mW
Junction TemperatureTj150
Storage TemperatureTstg-55+150
Collector-base breakdown voltageV(BR)CBOIC=100A, IE=060V
Collector-emitter breakdown voltageV(BR)CEOIC=0.1mA, IB=050V
Collector cut-off currentICBOVCB=60V, IE=00.1A
Emitter cut-off currentIEBOVEB=5V, IC=00.1A
DC current gainhFEVCE=6V, IC=2mA130-400
Collector cut-off currentICEOVCE=50V, IB=00.1A
Transition frequencyfTVCE=10V, IC= 1mA, f = 30MHz80MHz
Collector-emitter saturation voltageVCE(sat)IC=100mA, IB= 10mA0.25V
Base-emitter saturation voltageVBE(sat)IC=100mA, IB= 10mA1V

2411211946_MDD-Microdiode-Semiconductor-2SC1815_C2858506.pdf

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