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General purpose PNP transistor Nexperia BC807DS115 with low component count and AECQ101 certification

Categories	Single Bipolar Transistors
Emitter-Base Voltage(Vebo):	5V
Current - Collector Cutoff:	100nA
Pd - Power Dissipation:	600mW
Transition frequency(fT):	80MHz
type:	PNP
Number:	2 PNP
Current - Collector(Ic):	500mA
Collector - Emitter Voltage VCEO:	45V
Operating Temperature:	-65℃~+150℃
Description:	Bipolar (BJT) Transistor PNP 45V 500mA 80MHz 600mW Surface Mount SC-74-6
Mfr. Part #:	BC807DS,115
Model Number:	BC807DS,115
Package:	SC-74-6

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General purpose PNP transistor Nexperia BC807DS115 with low component count and AECQ101 certification

Product Overview

The Nexperia BC807DS is a PNP/PNP general-purpose double transistor designed for switching and amplification applications. This AEC-Q101 qualified component offers reduced component count and lower pick-and-place costs, making it suitable for automotive applications. It is available in an SOT457 (SC-74) plastic package.

Product Attributes

Brand: Nexperia
Product Type: PNP/PNP general purpose double transistors
Complementary NPN/NPN: BC817DS
Complementary NPN/PNP: BC817DPN
Qualification: AEC-Q101 qualified
Package Type: SOT457 (SC-74)
Material: Plastic, surface-mounted package

Technical Specifications

Symbol	Parameter	Conditions	Min	Typ	Max	Unit
Per transistor
VCEO	Collector-emitter voltage	Open base	-	-	-45	V
IC	Collector current	-	-	-	-500	mA
ICM	Peak collector current	Single pulse; tp 1 ms	-	-	1	A
VCBO	Collector-base voltage	Open emitter	-	-	-50	V
VEBO	Emitter-base voltage	Open collector	-	-	-5	V
IBM	Peak base current	Single pulse; tp 1 ms	-	-	-200	mA
Ptot	Total power dissipation	Tamb 25 C [1]	-	-	370	mW
Tj	Junction temperature	-	-	-	150	C
Tamb	Ambient temperature	-	-65	-	150	C
Tstg	Storage temperature	-	-65	-	150	C
Per device
Ptot	Total power dissipation	Tamb 25 C [1]	-	-	600	mW
Rth(j-a)	Thermal resistance from junction to ambient	In free air [1]	-	-	208	K/W
Characteristics (Tamb = 25 C unless otherwise specified)
ICBO	Collector-base cut-off current	VCB = -20 V; IE = 0 A	-	-	-100	nA
ICBO	Collector-base cut-off current	VCB = -20 V; IE = 0 A; Tj = 150 C	-	-	-5	A
IEBO	Emitter-base cut-off current	VEB = -5 V; IC = 0 A	-	-	-100	nA
hFE	DC current gain	VCE = -1 V; IC = -100 mA [1]	160	-	400	-
hFE	DC current gain	VCE = -1 V; IC = -500 mA [1]	40	-	-	-
VCEsat	Collector-emitter saturation voltage	IC = -500 mA; IB = -50 mA [1]	-	-	-700	mV
VBE	Base-emitter voltage	VCE = -1 V; IC = -500 mA [1] [2]	-	-	-1.2	V
Cc	Collector capacitance	VCB = -10 V; IE = 0 A; ie = 0 A; f = 1 MHz	-	9	-	pF
fT	Transition frequency	VCE = -5 V; IC = -10 mA; f = 100 MHz	80	-	-	MHz

[1] Device mounted on an FR4 Printed-Circuit Board (PCB); single-sided copper; tin plated; mounting pad for collector 1 cm.

[2] VBE decreases by approximately -2 mV/k with increasing temperature.

2410122132_Nexperia-BC807DS-115_C191355.pdf

General purpose PNP transistor Nexperia BC807DS115 with low component count and AECQ101 certification

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