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Flexibility Low Forward Voltage Schottky Diode , Durable Dual Schottky Diode

Categories Schottky Signal Diode
Brand Name: DEC
Model Number: MBRF20100DT
Certification: RoHS
Place of Origin: Jiangxi, China
MOQ: 1000PCS
Price: Negotiated
Payment Terms: Telegraphic Transfer in Advance (Advance TT, T/T)
Supply Ability: 15,000,000PCS Per Day
Delivery Time: 1 - 2 Weeks
Packaging Details: Boxed
Type: Low Forward Voltage Schottky Diode
Feature: Flexibility
Working peak reverse voltage: 100V
Maximum DC blocking voltage: 100V
Maximum average forward rectified current Total device: 20A
Peak Forward Surge Current: 150A
Operating junction temperature range: -65~150℃
Storage temperature range: -65~175℃
Maximum Reverse Leakage Current(Note 1): 0.2 / 15 μA
Maximum Instantaneous Forward Voltage(Note 2): 0.85 0.75 0.95 0.85 V
Typical Thermal Resistance,Junction to Case: 3.5℃/W
Voltage Rate of Change: 10000V/μs
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Flexibility Low Forward Voltage Schottky Diode , Durable Dual Schottky Diode

Flexibility Low Forward Voltage Schottky Diode , Durable Dual Schottky Diode


Low Forward Voltage Schottky Diode Features:


Low leakage current losses
Negligible switching losses
Low forward and reverse recovery times
Extremely fast switching
Surface mount device
Low capacitance diode


Low Forward Voltage Schottky Diode Application


The Schottky barrier diodes are used for signal-routing tasks, Metallurgically Bonded Construction , rail-to-rail protection and RF applications, such as balanced mixers and demodulators. Devices above 100 mA enter the converter application field with rectification tasks, or discrete OR-ing function.


Schottky Signal Diode Advantage


SBD has the advantages of high switching frequency and low forward voltage, but its reverse breakdown voltage is relatively low, mostly not higher than 60V, and the maximum is only about 100V, which limits its application range. For example, in the switching power supply (SMPS) and power factor correction (PFC) circuits, the freewheeling diode of the power switching device, the transformer secondary uses a high-frequency rectifier diode of 100V or more, and the RCD snubber circuit uses a high-speed diode of 600V to 1.2kV. The PFC boost uses a 600V diode, etc., and only uses a fast recovery epitaxial diode (FRED) and an ultra fast recovery diode (UFRD). The reverse recovery time Trr of UFRD is also above 20 ns, which cannot meet the needs of SMPS of 1 MHz to 3 MHz in fields such as space stations. Even with a SMPS with a hard switch of 100 kHz, due to the large conduction loss and switching loss of the UFRD, the case temperature is high, and a large heat sink is required, so that the volume and weight of the SMPS are increased, which is not compatible with miniaturization and thinning. The development trend. Therefore, the development of high-pressure SBD above 100V has always been a research topic and a hot spot of concern. In recent years, SBD has made breakthroughs. High-voltage SBDs of 150V and 200V have been launched. SBDs with more than 1kV made of new materials have also been successfully developed, thus injecting new vitality and vitality into their applications.


Detailed Product Description
Type:Schottky Signal DiodeRepetitive Peak Reverse Voltage:100V
Working Peak Reverse Voltage:100VMaximum DC Blocking Voltage:100V
Maximum Average Forward Rectified Current Total Device:20APeak Forward Surge Current:150A
Operating Junction Temperature Range:-65~150℃Storage Temperature Range:-65~175℃
Maximum Reverse Leakage Current(Note 1):0.2 / 15 μAMaximum Instantaneous Forward Voltage(Note 2):0.85 0.75 0.95 0.85 V
Typical Thermal Resistance,Junction To Case:3.5℃/WVoltage Rate Of Change:10000V/μs

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