Name: 28V DC85GHz 12W GaN RF Power Amplifier Transistor Integrated Chip
Brand: INNOTION
Price: 5.9 USD

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28V DC-8.5GHz 12W GaN RF Power Amplifier Transistor Integrated Chip

Categories	Signal Power Amplifier
Brand Name:	INNOTION
Model Number:	YP801241T
Place of Origin:	Jiangsu, China
MOQ:	10pcs
Price:	5.9USD each
Payment Terms:	T/T
Supply Ability:	100000pcs/month
Delivery Time:	1-3 days
Packaging Details:	Carton
Product Name:	Power Amplifier
Freq(GHz):	DC-8.5GHz
Pout:	12W
Character:	High Power

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Company Info.

Zhongshi Zhihui Technology (suzhou) Co., Ltd.

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Product Details
Company Profile

28V DC-8.5GHz 12W GaN RF Power Amplifier Transistor Integrated Chip

Factory Supply 100% New PA 28V DC-8.5GHz 12W GaN RF Amplifier Transistor

Innotion’s YP801241T is a 12-watt, pre-matched gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities with frequency up to 8500MHz. The transistor is supplied in a plastic DFN-6L 4mm*4.5mm package.

Product Specifications

Signal Bandwidth	DC-8.5GHz
Output Power	12W
Voltage	28V
Package	DFN-6L 4mm*4.5mm package

Company Information

Located in Suzhou Industrial Park and founded in 2010, we are the only official shop for our products. We sell our own manufactured products at competitive prices, including WiFi amplifiers, VCOs, sweep signal sources, wireless card groups, and other product lines.

Our philosophy is that professional people do professional things. We have mastered core technologies in our product field and hold numerous independent intellectual property rights.

Our products are sold throughout domestic markets and are popular with international customers in countries including Russia, the United States, South Korea, Vietnam, and Sweden.

Our Services

We stand by our commitment to ensure first-class customer service and support for all our products.

28V DC-8.5GHz 12W GaN RF Power Amplifier Transistor Integrated Chip

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