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0 005w Low Noise Rf Transistor

1-10 Results for

0 005w low noise rf transistor

from 9 Products

Low noise RF transistor Infineon BFR93AWH6327 ideal for in low distortion amplifiers and oscillators

China Low noise RF transistor Infineon BFR93AWH6327 ideal for in low distortion amplifiers and oscillators on sale
Product Overview The BFR93AW is a low-noise silicon bipolar RF transistor designed for low distortion amplifiers and oscillators operating up to 2 GHz. It is suitable for collector currents ranging from 5 mA to 30 mA and comes in a Pb-free and ......
Hefei Purple Horn E-Commerce Co., Ltd.

Address: Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province

HMC536LP2E RF Power Transistors High Performance Low Noise High Gain

China HMC536LP2E RF Power Transistors High Performance Low Noise High Gain on sale
...RF Power Transistor High Performance Low Noise High Gain HMC536LP2E Power Transistor Product Description: The HMC536LP2E is a GaAs pHEMT MMIC power amplifier which operates between DC and 6 GHz. This amplifier is designed for applications such as point-to-point radios, point-to-multipoint radios and VSATs. Features: • Gain: 14.5 dB • Power Output: +28 dBm • P1dB: +26 dBm • Noise......
Shenzhen Sai Collie Technology Co., Ltd.

Address: 1702, Dingcheng international building, Zhonghang Road, Futian District, Shenzhen

RF Power Transistors FHC40LG Super Low Noise HEMT FUJITSU RF Power Transistors RF MODULE

China RF Power Transistors FHC40LG Super Low Noise HEMT FUJITSU RF Power Transistors RF MODULE on sale
FHC40LG is a Super Low Noise HEMT. Part NO: FHC40LG Brand: FUJITSU Date Code: 04+ Quality Warranty: 3 Months Mounting Type: Screws Overview Mega Source Electronic Co., LTD specializes in High frequency microwave devices: These products are widely used in ......
Mega Source Elec.Limited

Address: R-62852 Golconda Electronic Market ,Zhenhua Road ,Futian District .SZ.CN.518031

BFQ67W SOT-23 Electronics Integrated Circuits Complementary Silicon NPN Planar RF Transistor

China BFQ67W  SOT-23 Electronics Integrated Circuits Complementary Silicon NPN Planar RF Transistor on sale
...)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Applications Low noise small signal amplifiers up to 2 GHz. This transistor has superior noise figure and associated gain performance at UHF, VHF and microwave frequencies....
ChongMing Group (HK) Int'l Co., Ltd

Address: Room 1204, DingCheng International Building, 518028 Futian District, SHENZHEN, CN

MMBF5484 Audio Signal Amplifier Transistor Low Noise N Channel

China MMBF5484 Audio Signal Amplifier Transistor Low Noise N Channel on sale
...: RF JFET Transistors RoHS: Details Transistor Type: JFET Technology: Si Transistor Polarity: N-Channel Vgs - Gate-Source Breakdown Voltage: - 25 V Id - Continuous Drain Current: 5 mA Maximum Drain ......
QIN XIN (HONG KONG) ELECTRONIC TECHNOLOGY CO.,LIMITED

Address: FLAT/RM D52 3/F WONG KING INDUSTRIAL BUILDING NO 2TAU=I YAU STREET

38mA 2300MHz - 2500MHz Analog Devices Vco , High Stability Low Noise Vco YSGM232510

China 38mA 2300MHz - 2500MHz Analog Devices Vco , High Stability Low Noise Vco YSGM232510 on sale
TXtelsig YSGM232510 VCO 2300MHz to 2500MHz Voltage Controlled Oscillator VCO Application: 1. Signal generator. 2. Used in electronic music to create transposition. 3. Phase lock loop. 4. Frequency synthesizer in communication equipment. TXtelsig VCO ......
Shenzhen TeXin electronic Co., Limited

Address: 201, Building A, No.1 Xinghua Road, Pingxi Community, Pingdi Street, Longgang District, Shenzhen

BFS505 15V RF Power Transistor , 18mA 9GHz 150mW Surface Mount Transistor

China BFS505 15V  RF Power Transistor , 18mA 9GHz 150mW Surface Mount Transistor on sale
...Transistors RF Transistor NPN 15V 18mA 9GHz 150mW Surface Mount NPN 9 GHz wideband transistor FEATURES • Low current consumption • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability • SOT323 envelope. DESCRIPTION NPN transistor in a plastic SOT323 envelope. It is intended for low power amplifiers, oscillators and mixers particularly in RF......
DELI ELECTRONICS TECHNOLOGY CO.,LTD

Address: RM 311 3/F LINZHAN FORTUNE BUILDING No.1 SHENHUA STREET SHENFENG ROAD LIUYUE LONGGANG AREA SHENZHEN,CHINA

2SC3356- T1B NPN Silicon RF Power Mosfet Transistor 100 mA Collector Current

China 2SC3356- T1B NPN Silicon RF Power Mosfet Transistor 100 mA Collector Current on sale
2SC3356- T1B NPN Silicon RF Power Mosfet Transistor 100 mA Collector Current FEATURES • Low noise and high gain : NF = 1.1 dB TYP., Ga = 11 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1 GHz • High ......
Anterwell Technology Ltd.

Address: Room 36B1-B2, Building C, Electronics Science & Technology Building Shennan Mid-Road, Shenzhen China

FT93C46A-IDR-B IC EEPROM 1KBIT 3-WIRE 2MHZ 8DIP Fremont Micro Devices Ltd

China FT93C46A-IDR-B IC EEPROM 1KBIT 3-WIRE 2MHZ 8DIP Fremont Micro Devices Ltd on sale
..., spectrum analyzers, etc. The transistor features low intermodulation distortion and high power gain; due to its very high transition frequency, it also has excellent wideband properties and low noise up to high frequencies. NPN complements are BFR93 and...
Sanhuang electronics (Hong Kong) Co., Limited

Address: No. 2520, 25th Floor, Block A, New Asia Guoli Building, Huaqiang North Street, Shenzhen, China

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Products: FT93C46A-IDR-B IC EEPROM 1KBIT 3-WIRE 2MHZ 8DIP Fremont Micro Devices Ltd

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