4inch SiC Epitaxial Wafer 4H-N Diameter 100mm Thickness 350μm Prime Grade
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... SiC epitaxial wafer 4H overview 4inch SiC Epitaxial Wafer 4H-N Diameter 100mm Thickness 350μm Prime Grade As a core material for silicon carbide (SiC) power device manufacturing, the 4-inch SiC epitaxial wafer is based on a 4H-N-type SiC wafer, grown......
SHANGHAI FAMOUS TRADE CO.,LTD
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SiC Epitaxial Wafer 4H/6H SiC Substrates Custom Thickness Doping
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...RF device manufacturers worldwide. The 4” wafer size strikes an excellent balance between performance, availability, and cost-effectiveness—making it the industry’s mainstream choice for mid-to-high volume production. SiC epitaxial wafers consist of...
SHANGHAI FAMOUS TRADE CO.,LTD
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SiC Substrate Wafer Manufacturer 4 inch P Grade SiC Wafer Factory
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SiC Substrate Wafer Manufacturer 4 inch P Grade SiC Wafer Factory Homray Material Technology offers silicon carbide SiC n-type and p-tpye epitaxial wafer. SiC epi wafer is mainly used for Schottky diodes, metal-oxiHomray Material Technology offersthe best price on the market for high quality SiC wafers and silicon carbide epitaxial wafers......
Homray Material Technology
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1500C CVD SIC Epitaxy Growth Furnace for Silicon Carbide Growth in 1000*1000*1500mm Effective Space
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... of the semiconductor epitaxial susceptor and etching ring. Epitaxial base, a high-purity graphite disk, with a circular groove on it to fix the wafer substrate.After placing them in the furnace, a layer of crystal film will grow on the surface of the...
Zhuzhou Ruideer Metallurgy Equipment Manufacturing Co.,Ltd
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4" Silicon Epitaxial Wafer Substrate Thickness 525 ± 25µm / Resistivity 0.002 - 0.003Ωcm , 2 Epitaxial Layers
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...Epitaxial Wafer Substrate Thickness 525 ± 25µm / Resistivity 0.002 - 0.003Ωcm , 2 Epitaxial Layers PAM-XIAMEN custom epitaxial or EPI wafer services on silicon wafers for research and development or mass production. PAM-XIAMEN processes single crystalline EPI layers on wafer diameters from 50mm to 150mm. Epitaxy is offered on bare wafers or those with buried layers, patterns or advanced device structures. For epitaxial......
XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.
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Silicon Back Grinding Wheels Sapphire Epitaxial Wafer For Simiconductor Field
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..., silicon wafer, gallium arsenide and GaN wafer. This kind of grinding wheel developed in out company can replace foreign products. They can be used steadily on the Japanese, Korean grinders with high performance. ......
SIGNI INDUSTRIAL (SHANGHAI) CO., LTD
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6A2 Back Grinding Wheel High Efficiency Custom Size Sapphire Epitaxial Wafer
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... selection of back grinding wheels. This particular grinding tool comes in two types: a silicon wafer back grinding wheel and an LED substrate back grinding wheel. Both of them can be used on different grinding machines made in Europe,America,Japan, and...
Zhengzhou Hongtuo Superabrasive Products Co., Ltd.
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High Purity Silicon Carbide Ceramics SiC Vertical Wafer Boat For Semiconductor Use
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Product Description: One of the key features of this product is its maximum temperature resistance of 1700℃. This makes it an ideal choice for applications that require high-temperature resistance, such as silicon carbide cooling air pipes, silicon carbide......
Wuxi Special Ceramic Electrical Co.,Ltd
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200mm 300mm Sapphire Wafer Single Side Polished Wafer
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... optical grade Kyropoulos grown sapphire crystals. high purity single crystal sapphire epitaxial substrate is suitable for direct epitaxial process, PSS process, ALN process and other epitaxial methods. It has the characteristics of uniform wavelength,...
Chongqing Silian Optoelectronic Science & Technology Co., Ltd.
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Optoelectronic Device SiC Wafer for Light Emitting Diodes
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... material , with unique electrical properties and excellent thermal properties , compared to silicon wafer and GaAs wafer , SiC wafer is more suitable for high temperature and high power device application . SiC wafer can be supplied in diameter 2...
HENAN ZG INDUSTRIAL PRODUCTS CO.,LTD
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