Integrated Circuit Chip MSC180SMA120B 1200V SiC MOSFET Transistors TO-247-4
|
...1200V SiC MOSFET Transistors TO-247-4 Product Description Of MSC180SMA120B MSC180SMA120B is Silicon Carbide N-Channel Power MOSFET Transistors, 1200V, 180mΩ SiC MOSFET, package is TO-247-4. Specification Of MSC180SMA120B Part Number MSC180SMA120B FET Type N-Channel Technology SiC (Silicon Carbide Junction Transistor......
ShenZhen Mingjiada Electronics Co.,Ltd.
|
Industrial 1200V SiC Power Transistors , Stable High Voltage N Channel Mosfet
|
...Transistor (SiC MOSFETs) are an advanced type of power device, with high efficiency and excellent performance. SiC MOSFETs feature low on-resistance and high power capabilities, enabling reliable operation and superior switching performance. Based on the national military standard production line, the process is stable and the quality is reliable. The use of SiC MOSFETs...
Reasunos Semiconductor Technology Co., Ltd.
|
1200v 50a High Power Mosfet Transistors / Thyristor CLA50E1200HB
|
...MOSFET TRANSISTORS / THYRISTOR FOR LINE FREQUENCY 1200V 50A Goods Condition: Brand New Part Status: Active Lead Free / Rohs: Complaint Function: Circuit Control Mounting Type: Through Hole Package: TO247 High Light: n channel mosfet transistor , n channel transistor CLA50E1200HB High Efficiency Thyristor for for line frequency 1200V......
Shenzhen Huahao Gaosheng Technology Co., Ltd
|
CLA50E1200HB High Power Mosfet Transistors / Thyristor For Line Frequency 1200V 50A
|
CLA50E1200HB High Efficiency Thyristor for for line frequency 1200V 50A Features / Advantages: ● Thyristor for line frequency ● Planar passivated chip ● Long-term stability Applications: ● Softstart AC motor control ● DC Motor control ● Power converter ● ......
Shenzhen Koben Electronics Co., Ltd.
|
H30R1353 H30R1602 H20R1353 N Mosfet Transistor 254W H15R1203 H25R1202 H20R1203
|
... (Max) 1200V Current - Collector (Ic) (Max) 30A Current - Collector Pulsed (Icm) 45A Vce(on) (Max) @ Vge, Ic 1.7V @ ......
Shenzhen Quanyuantong Electronics Co., Ltd.
|
FGA25N120ANTD Power Mosfet Transistor New & Original 1200V NPT Trench IGBT
|
FGA25N120ANTD/FGA25N120ANTD_F109 1200V NPT Trench IGBT Features • NPT Trench Technology, Positive temperature coefficient • Low saturation voltage: VCE(sat), typ = 2.0V @ IC = 25A and TC = 25°C • Low switching loss: Eoff, typ = 0.96mJ @ IC = 25A and TC = ......
Anterwell Technology Ltd.
|
Original High Voltage Mosfet Transistor , Mosfet Driver Using Transistor
|
..., as we can see in the following figure. Thus the device is also called as the V-MOSFET or V-FET. The V- the shape of power MOSFET is cut to penetrate from the device surface is almost to the N+ substrate to the N+, P, and N – layers. The N+ layer is the...
Shenzhen Hua Xuan Yang Electronics Co.,Ltd
|
FGA25N120ANTDTU Power Mosfet Transistor New & Original 1200V NPT Trench IGBT
|
FGA25N120ANTD/FGA25N120ANTD_F109 1200V NPT Trench IGBT Features • NPT Trench Technology, Positive temperature coefficient • Low saturation voltage: VCE(sat), typ = 2.0V @ IC = 25A and TC = 25°C • Low switching loss: Eoff, typ = 0.96mJ @ IC = 25A and TC = ......
ChongMing Group (HK) Int'l Co., Ltd
|
750319331 Auxiliary Gate Drive Transformer EP7 Package For SiC-MOSFET / IGBT
|
... for 568 Vrms / 800 Vpk Operating temperature: -40 °C up to +130 °C Common control voltages for SiC MOSFET’s High Common-mode Transient Immunity (CMTI) Flyback, LLC, Half-Bridge topologies Up to 6 W output power Wide range ......
SHAREWAY TECHNOLOGY CO., LTD.
|
D1028UK RF MOSFET Transistors RF MOSFET N-CH 70V 30A 5-Pin Case DR P Channel Mosfet
|
D1028UK RF MOSFET Transistors RF MOSFET N-CH 70V 30A 5-Pin Case DR anufacturer: TT Electronics Product Category: RF MOSFET Transistors Transistor Polarity: N-Channel Technology: Si Id - Continuous Drain Current: 30 A Vds - Drain-Source Breakdown Voltage: ......
Wisdtech Technology Co.,Limited
|
Submit your “1200v sic mosfet transistors” inquiry in a minute :